BLF6G22LS-100 NXP Semiconductors, BLF6G22LS-100 Datasheet
BLF6G22LS-100
Specifications of BLF6G22LS-100
Related parts for BLF6G22LS-100
BLF6G22LS-100 Summary of contents
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... BLF6G22LS-100 Power LDMOS transistor Rev. 3 — 12 November 2010 1. Product profile 1.1 General description 100 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. RF performance at T Mode of operation 2-carrier W-CDMA [1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 0.01 % probability on CCDF per carrier; ...
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... RF power amplifiers for W-CDMA base stations and multi carrier applications in the 2000 MHz to 2200 MHz frequency range 2. Pinning information Table 2. Pin [1] Connected to flange. 3. Ordering information Table 3. Type number BLF6G22LS-100 - 4. Limiting values Table 4. In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol stg ...
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... Symbol Parameter P L(AV IRL η D IMD3 ACPR 7.1 Ruggedness in class-AB operation The BLF6G22LS-100 is capable of withstanding a load mismatch corresponding to VSWR = through all phases under the following conditions 950 mA BLF6G22LS-100 Product data sheet Characteristics C unless otherwise specified. drain-source breakdown voltage gate-source threshold voltage ...
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... One-tone CW power gain and drain efficiency as functions of load power; typical values 001aah696 60 IMD (dBc) η D (%) 120 180 P (W) L(PEP) Fig 3. All information provided in this document is subject to legal disclaimers. Rev. 3 — 12 November 2010 BLF6G22LS-100 Power LDMOS transistor 001aah695 60 η D (%) 100 120 140 P (W) L − ...
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... P (W) L(AV) Fig 5. All information provided in this document is subject to legal disclaimers. Rev. 3 — 12 November 2010 BLF6G22LS-100 Power LDMOS transistor IMD3 ACPR L(AV 950 mA 2140 MHz (± 5 MHz carrier spacing 10 MHz. 2-carrier W-CDMA adjacent channel power ratio and third order intermodulation distortion as functions of average load power ...
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... All information provided in this document is subject to legal disclaimers. Rev. 3 — 12 November 2010 BLF6G22LS-100 Power LDMOS transistor C23 C13 C11 C9 C10 C12 ...
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... SMD resistor SMD resistor All information provided in this document is subject to legal disclaimers. Rev. 3 — 12 November 2010 BLF6G22LS-100 Power LDMOS transistor 6) …continued Value Remarks 220 nF SMD 1206; AVX or capacitor of same ...
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... REFERENCES JEDEC JEITA All information provided in this document is subject to legal disclaimers. Rev. 3 — 12 November 2010 BLF6G22LS-100 Power LDMOS transistor 1.70 20.70 9.91 0.25 1.45 20.45 9.65 0.067 0.815 ...
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... Product data sheet 6: correction: C_rs condition MHz MHz Product data sheet Preliminary data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 12 November 2010 BLF6G22LS-100 Power LDMOS transistor Change notice Supersedes - BLF6G22LS-100 v.2 - BLF6G22LS-100 v © NXP B.V. 2010. All rights reserved ...
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... Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. All information provided in this document is subject to legal disclaimers. Rev. 3 — 12 November 2010 BLF6G22LS-100 Power LDMOS transistor © NXP B.V. 2010. All rights reserved ...
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... Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 3 — 12 November 2010 BLF6G22LS-100 Power LDMOS transistor © NXP B.V. 2010. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 12 November 2010 Document identifier: BLF6G22LS-100 ...