BLF6G22LS-75,112 NXP Semiconductors, BLF6G22LS-75,112 Datasheet
BLF6G22LS-75,112
Specifications of BLF6G22LS-75,112
BLF6G22LS-75
BLF6G22LS-75
Related parts for BLF6G22LS-75,112
BLF6G22LS-75,112 Summary of contents
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... BLF6G22LS-75 Power LDMOS transistor Rev. 02 — 14 April 2010 1. Product profile 1.1 General description 75 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. RF performance at T Mode of operation 2-carrier W-CDMA [1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 0.01 % probability on CCDF per carrier; ...
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... Thermal characteristics Parameter thermal resistance from junction to case All information provided in this document is subject to legal disclaimers. Rev. 02 — 14 April 2010 BLF6G22LS-75 Power LDMOS transistor Simplified outline Graphic symbol 1 3 [1] 2 Min - − ...
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... Symbol Parameter G p IRL η D IMD3 ACPR 7.1 Ruggedness in class-AB operation The BLF6G22LS-75 is capable of withstanding a load mismatch corresponding to VSWR = through all phases under the following conditions 690 mA BLF6G22LS-75_2 Product data sheet Characteristics C unless otherwise specified. drain-source breakdown ...
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... One-tone CW power gain and drain efficiency as functions of load power; typical values 001aah567 60 η IMD D (%) (dBc 100 120 140 P (W) L(PEP) = 2140 MHz 2140 Fig 3. All information provided in this document is subject to legal disclaimers. Rev. 02 — 14 April 2010 BLF6G22LS-75 Power LDMOS transistor 001aah586 70 η D (%) 100 P (W) L −15 −30 −45 −60 − ...
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... ACPR (%) (dBc (W) L(AV) = 2135 MHz; 1 Fig All information provided in this document is subject to legal disclaimers. Rev. 02 — 14 April 2010 BLF6G22LS-75 Power LDMOS transistor −25 IMD3 −35 ACPR −45 − 690 mA 2135 MHz 2145 MHz; carrier spacing 10 MHz. 2 2-carrier W-CDMA adjacent power channel ratio and third order intermodulation distortion as functions of average load power ...
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... C4 C15 Figure 6 and Figure 7) Value 10 μ 220 μ 3.3 Ω 5.1 Ω All information provided in this document is subject to legal disclaimers. Rev. 02 — 14 April 2010 BLF6G22LS-75 Power LDMOS transistor C23 C10 C11 C13 C12 C14 C20 C17 C19 C16 C18 = 3.5 and thickness = 0.76 mm. ...
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... REFERENCES JEDEC JEITA All information provided in this document is subject to legal disclaimers. Rev. 02 — 14 April 2010 BLF6G22LS-75 Power LDMOS transistor 1.70 20.70 9.91 0.25 1.45 20.45 9.65 0.067 0.815 ...
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... Wideband Code Division Multiple Access Data sheet status Product data sheet Preliminary data sheet All information provided in this document is subject to legal disclaimers. Rev. 02 — 14 April 2010 BLF6G22LS-75 Power LDMOS transistor Change notice Supersedes - BLF6G22LS-75_1 - - © NXP B.V. 2010. All rights reserved ...
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... In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors’ warranty of the All information provided in this document is subject to legal disclaimers. Rev. 02 — 14 April 2010 BLF6G22LS-75 Power LDMOS transistor © NXP B.V. 2010. All rights reserved ...
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... Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 02 — 14 April 2010 BLF6G22LS-75 Power LDMOS transistor © NXP B.V. 2010. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Document identifier: BLF6G22LS-75_2 All rights reserved. Date of release: 14 April 2010 ...