BLF6G22LS-100,112 NXP Semiconductors, BLF6G22LS-100,112 Datasheet - Page 2

• Manufacturer Part Number: BLF6G22LS-100,112
• Description: TRANS BASESTATION 2-LDMOST
• Manufacturer: NXP Semiconductors

Specifications of BLF6G22LS-100,112

• Package / Case: SOT502B
• Transistor Type: LDMOS
• Frequency: 2.11GHz
• Gain: 18.5dB
• Voltage - Rated: 65V
• Current Rating: 29A
• Current - Test: 950mA
• Voltage - Test: 28V
• Power - Output: 25W
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.16 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 13 V
• Continuous Drain Current: 29 A
• Maximum Operating Temperature: + 225 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 65V
• Output Power (max): 25W(Typ)
• Power Gain (typ)@vds: 18.2@28VdB
• Frequency (min): 2.11GHz
• Frequency (max): 2.17GHz
• Package Type: LDMOST
• Pin Count: 3
• Forward Transconductance (typ): 11S
• Drain Source Resistance (max): 160@6.15Vmohm
• Reverse Capacitance (typ): 2.1@28VpF
• Operating Temp Range: -65C to 225C
• Drain Efficiency (typ): 29%
• Mounting: Surface Mount
• Mode Of Operation: 2-Carrier W-CDMA
• Number Of Elements: 1
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 934061129112; BLF6G22LS-100; BLF6G22LS-100

NXP Semiconductors
2. Pinning information
3. Ordering information
4. Limiting values
5. Thermal characteristics
BLF6G22LS-100
Product data sheet
1.3 Applications
Table 2.
[1]
Table 3.
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Table 5.
Pin
1
2
3
Type number
BLF6G22LS-100 -
Symbol
V
V
I
T
Symbol
R
T
D
stg
j
DS
GS
th(j-case)
RF power amplifiers for W-CDMA base stations and multi carrier applications in the
2000 MHz to 2200 MHz frequency range
Connected to flange.
Parameter
thermal resistance from junction to case
Pinning
Ordering information
Limiting values
Thermal characteristics
Parameter
drain-source voltage
gate-source voltage
drain current
storage temperature
junction temperature
drain
gate
source
Description
All information provided in this document is subject to legal disclaimers.
Package
Name
Rev. 3 — 12 November 2010
Description
earless flanged LDMOST ceramic package; 2 leads
Conditions
[1]
Simplified outline
Conditions
T
case
BLF6G22LS-100
= 80 °C; P
1
2
3
Power LDMOS transistor
L
= 25 W
Graphic symbol
-
Min
-
−0.5
-
−65
© NXP B.V. 2010. All rights reserved.
2
Max
65
+13
29
+150
225
sym112
Typ
0.43 K/W
Version
SOT502B
1
3
2 of 12
Unit
Unit
V
V
A
°C
°C