BLF6G10-135RN,112 NXP Semiconductors, BLF6G10-135RN,112 Datasheet - Page 2
![TRANSISTOR POWER LDMOS SOT502A](/photos/5/63/56386/568-2-ldmost_sot-502a_sml.jpg)
BLF6G10-135RN,112
Manufacturer Part Number
BLF6G10-135RN,112
Description
TRANSISTOR POWER LDMOS SOT502A
Manufacturer
NXP Semiconductors
Datasheet
1.BLF6G10LS-135R118.pdf
(11 pages)
Specifications of BLF6G10-135RN,112
Transistor Type
LDMOS
Frequency
871.5MHz
Gain
21dB
Voltage - Rated
65V
Current Rating
32A
Current - Test
950mA
Voltage - Test
28V
Power - Output
26.5W
Package / Case
SOT502A
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934063263112
NXP Semiconductors
2. Pinning information
3. Ordering information
4. Limiting values
BLF6G10-135RN_10LS-135RN_2
Product data sheet
1.3 Applications
Table 2.
[1]
Table 3.
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Pin
BLF6G10-135RN (SOT502A)
1
2
3
BLF6G10LS-135RN (SOT502B)
1
2
3
Type number
BLF6G10-135RN
BLF6G10LS-135RN
Symbol
V
V
I
T
T
D
stg
j
DS
GS
RF power amplifiers for GSM, GSM EDGE, W-CDMA and CDMA base stations and
multi carrier applications in the 700 MHz to 1000 MHz frequency range
Connected to flange.
Pinning
Ordering information
Limiting values
Parameter
drain-source voltage
gate-source voltage
drain current
storage temperature
junction temperature
drain
gate
source
drain
gate
source
Description
Package
Name Description
-
-
Rev. 02 — 21 January 2010
flanged LDMOST ceramic package; 2 mounting holes;
2 leads
earless flanged LDMOST ceramic package; 2 leads
Conditions
BLF6G10(LS)-135RN
[1]
[1]
Simplified outline
1
2
1
2
3
Power LDMOS transistor
3
Graphic symbol
-
Min
-
−0.5
-
−65
© NXP B.V. 2010. All rights reserved.
2
2
Max
65
+13
32
+150
225
sym112
sym112
Version
SOT502A
SOT502B
1
3
1
3
2 of 11
Unit
V
V
A
°C
°C