BLF6G10LS-135R,112 NXP Semiconductors, BLF6G10LS-135R,112 Datasheet - Page 5

• Manufacturer Part Number: BLF6G10LS-135R,112
• Description: IC BASESTATION FINAL SOT502B
• Manufacturer: NXP Semiconductors

Specifications of BLF6G10LS-135R,112

• Package / Case: SOT502B
• Transistor Type: LDMOS
• Frequency: 871.5MHz
• Gain: 21dB
• Voltage - Rated: 65V
• Current Rating: 32A
• Current - Test: 950mA
• Voltage - Test: 28V
• Power - Output: 26.5W
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.1 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 13 V
• Continuous Drain Current: 32 A
• Maximum Operating Temperature: + 225 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 65V
• Output Power (max): 26.5W(Typ)
• Power Gain (typ)@vds: 21@28VdB
• Frequency (min): 869MHz
• Frequency (max): 894MHz
• Package Type: LDMOST
• Pin Count: 3
• Forward Transconductance (typ): 13S
• Drain Source Resistance (max): 100(Typ)@6.15Vmohm
• Reverse Capacitance (typ): 2@28VpF
• Operating Temp Range: -65C to 225C
• Drain Efficiency (typ): 28%
• Mounting: Surface Mount
• Mode Of Operation: 2-Carrier W-CDMA
• Number Of Elements: 1
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 934061247112; BLF6G10LS-135R; BLF6G10LS-135R

NXP Semiconductors
8. Test information
BLF6G10LS-135R_1
Product data sheet
Fig 4.
Fig 6.
input
50
(dB)
G
p
24
23
22
21
20
19
0
V
carrier spacing 5 MHz.
2-carrier W-CDMA power gain and drain
efficiency as function of average load power;
typical values
The drawing is not to scale.
Test circuit for operation at 800 MHz
DS
G
D
p
= 28 V; I
12
Dq
V
GG
= 950 mA; f
24
R1
C1
36
1
= 881 MHz; f
C3
48
P
001aah867
L(AV)
C2
2
Rev. 01 — 17 November 2008
(W)
= 886 MHz;
R2
60
50
40
30
20
10
0
(%)
D
C4
C5
Fig 5.
C12
C8
ACPR
(dBc)
20
30
40
50
C13
C9
C6
C7
0
V
carrier spacing 5 MHz.
2-carrier W-CDMA adjacent power channel
ratio as a function of average load power;
typical values
DS
C14
C10
= 28 V; I
C15
C11
BLF6G10LS-135R
C18
Dq
C19
20
= 950 mA; f
R3
L1
Power LDMOS transistor
1
= 881 MHz; f
40
P
C16
L(AV)
© NXP B.V. 2008. All rights reserved.
C17
C20
001aah868
(W)
2
= 886 MHz;
60
V
001aah869
DD
output
50
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