BLF6G10LS-135R,112 NXP Semiconductors, BLF6G10LS-135R,112 Datasheet - Page 3

• Manufacturer Part Number: BLF6G10LS-135R,112
• Description: IC BASESTATION FINAL SOT502B
• Manufacturer: NXP Semiconductors

Specifications of BLF6G10LS-135R,112

• Package / Case: SOT502B
• Transistor Type: LDMOS
• Frequency: 871.5MHz
• Gain: 21dB
• Voltage - Rated: 65V
• Current Rating: 32A
• Current - Test: 950mA
• Voltage - Test: 28V
• Power - Output: 26.5W
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.1 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 13 V
• Continuous Drain Current: 32 A
• Maximum Operating Temperature: + 225 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 65V
• Output Power (max): 26.5W(Typ)
• Power Gain (typ)@vds: 21@28VdB
• Frequency (min): 869MHz
• Frequency (max): 894MHz
• Package Type: LDMOST
• Pin Count: 3
• Forward Transconductance (typ): 13S
• Drain Source Resistance (max): 100(Typ)@6.15Vmohm
• Reverse Capacitance (typ): 2@28VpF
• Operating Temp Range: -65C to 225C
• Drain Efficiency (typ): 28%
• Mounting: Surface Mount
• Mode Of Operation: 2-Carrier W-CDMA
• Number Of Elements: 1
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 934061247112; BLF6G10LS-135R; BLF6G10LS-135R

NXP Semiconductors
6. Characteristics
7. Application information
BLF6G10LS-135R_1
Product data sheet
7.1 Ruggedness in class-AB operation
Table 6.
T
Table 7.
Mode of operation: 2-carrier W-CDMA; PAR 7.5 dB at 0.01 % probability on CCDF; 3GPP test
model 1; 1-64 PDPCH; f
RF performance at V
class-AB production test circuit.
The BLF6G10LS-135R is capable of withstanding a load mismatch corresponding to
VSWR = 10 : 1 through all phases under the following conditions: V
I
Symbol Parameter
V
V
V
I
I
I
g
R
C
Symbol
P
G
RL
ACPR
Dq
DSS
DSX
GSS
j
fs
D
(BR)DSS
GS(th)
GSq
L(AV)
DS(on)
rs
p
= 25 C unless otherwise specified.
in
= 950 mA; P
drain-source breakdown
voltage
gate-source threshold voltage
gate-source quiescent voltage V
drain leakage current
drain cut-off current
gate leakage current
forward transconductance
drain-source on-state
resistance
feedback capacitance
Parameter
average output power
power gain
input return loss
drain efficiency
adjacent channel power ratio
Characteristics
Application information
L
= 135 W; f = 894 MHz.
DS
Rev. 01 — 17 November 2008
= 28 V; I
1
= 871.5 MHz; f
Dq
= 950 mA; T
2
= 876.5 MHz; f
Conditions
V
V
V
V
V
V
V
V
I
V
f = 1 MHz
D
GS
DS
DS
GS
GS
DS
GS
DS
GS
GS
= 6.3 A
case
= 10 V; I
= 28 V; I
= 10 V
= 10 V; I
= 0 V; I
= 0 V; V
= V
= 11 V; V
= V
= 0 V; V
Conditions
P
P
P
P
GS(th)
GS(th)
= 25 C; unless otherwise specified; in a
L(AV)
L(AV)
L(AV)
L(AV)
D
DS
DS
D
D
D
= 0.8 mA
+ 3.75 V;
+ 3.75 V;
DS
3
BLF6G10LS-135R
= 26.5 W
= 26.5 W
= 26.5 W
= 26.5 W
= 180 mA
= 950 mA
= 9 A
= 886.5 MHz; f
= 28 V
= 28 V;
= 0 V
Power LDMOS transistor
Min
-
20.0
-
26.0
-
Min
65
1.4
1.6
-
24
-
7
-
-
4
DS
= 891.5 MHz;
Typ
26.5
21.0
28.0
= 28 V;
Typ
-
1.9
2.1
-
32
-
13
0.1
2.0
© NXP B.V. 2008. All rights reserved.
11.0
39
Max
-
-
-
Max
-
2.4
2.6
3
-
300
-
-
-
8.0
36.5 dBc
3 of 10
Unit
W
dB
dB
%
Unit
V
V
V
A
nA
S
pF
A