BLF6G22LS-75,112 NXP Semiconductors, BLF6G22LS-75,112 Datasheet - Page 4

• Manufacturer Part Number: BLF6G22LS-75,112
• Description: TRANS BASESTATION 2-LDMOST
• Manufacturer: NXP Semiconductors

Specifications of BLF6G22LS-75,112

• Package / Case: SOT502B
• Transistor Type: LDMOS
• Frequency: 2.11GHz
• Gain: 18.7dB
• Voltage - Rated: 65V
• Current Rating: 18A
• Current - Test: 690mA
• Voltage - Test: 28V
• Power - Output: 17W
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.24 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 13 V
• Continuous Drain Current: 18 A
• Maximum Operating Temperature: + 225 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934061559112; BLF6G22LS-75; BLF6G22LS-75

NXP Semiconductors
BLF6G22LS-75_2
Product data sheet
Fig 2.
(dB)
G
p
20
19
18
17
16
0
V
MHz.
Two-tone CW power gain and drain efficiency
as functions of peak envelope load power;
typical values
DS
= 28 V; I
20
G
η
D
p
40
Dq
= 690 mA; f
Fig 1.
60
80
1
V
One-tone CW power gain and drain efficiency as functions of load power; typical
values
= 2140 MHz; f
DS
100
= 28 V; I
All information provided in this document is subject to legal disclaimers.
001aah567
P
120
L(PEP)
Dq
2
(dB)
G
= 690 mA; f = 2140 MHz.
140
(W)
= 2140.1
p
Rev. 02 — 14 April 2010
20
19
18
17
16
60
45
30
15
0
(%)
0
η
D
G
η
D
p
20
Fig 3.
(dBc)
IMD
−15
−30
−45
−60
−75
40
0
V
MHz.
Two-tone CW intermodulation distortion as a
function of peak envelope load power;
typical values
DS
= 28 V; I
60
20
40
Dq
80
= 690 mA; f
001aah586
P
BLF6G22LS-75
L
60
(W)
100
Power LDMOS transistor
80
70
55
40
25
10
1
(%)
η
= 2140 MHz; f
D
100
© NXP B.V. 2010. All rights reserved.
001aah568
P
IMD3
IMD5
IMD7
120
L(PEP)
2
140
(W)
= 2140.1
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