BLF6G22LS-75,112 NXP Semiconductors, BLF6G22LS-75,112 Datasheet - Page 10

• Manufacturer Part Number: BLF6G22LS-75,112
• Description: TRANS BASESTATION 2-LDMOST
• Manufacturer: NXP Semiconductors

Specifications of BLF6G22LS-75,112

• Package / Case: SOT502B
• Transistor Type: LDMOS
• Frequency: 2.11GHz
• Gain: 18.7dB
• Voltage - Rated: 65V
• Current Rating: 18A
• Current - Test: 690mA
• Voltage - Test: 28V
• Power - Output: 17W
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.24 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 13 V
• Continuous Drain Current: 18 A
• Maximum Operating Temperature: + 225 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934061559112; BLF6G22LS-75; BLF6G22LS-75

NXP Semiconductors
product for such automotive applications, use and specifications, and (b)
whenever customer uses the product for automotive applications beyond
NXP Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies NXP Semiconductors for any
liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.
13. Contact information
For more information, please visit:
For sales office addresses, please send an email to:
BLF6G22LS-75_2
Product data sheet
http://www.nxp.com
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 14 April 2010
[e-mail]
12.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
BLF6G22LS-75
Power LDMOS transistor
© NXP B.V. 2010. All rights reserved.
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