BLF6G22LS-75,118 NXP Semiconductors, BLF6G22LS-75,118 Datasheet - Page 6

• Manufacturer Part Number: BLF6G22LS-75,118
• Description: TRANS BASESTATION 2-LDMOST
• Manufacturer: NXP Semiconductors

Specifications of BLF6G22LS-75,118

• Package / Case: SOT502B
• Transistor Type: LDMOS
• Frequency: 2.11GHz
• Gain: 18.7dB
• Voltage - Rated: 65V
• Current Rating: 18A
• Current - Test: 690mA
• Voltage - Test: 28V
• Power - Output: 17W
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.07 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 13 V
• Continuous Drain Current: 39 A
• Maximum Operating Temperature: + 225 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934061559118; BLF6G22LS-75 /T3; BLF6G22LS-75 /T3

NXP Semiconductors
Table 8.
[1]
BLF6G22LS-75_2
Product data sheet
Component
C1
C2, C3
C4
C5, C6, C13, C14, C18, C19 multilayer ceramic chip capacitor 1.5 μF
C7, C8, C11, C16
C9
C10, C15
C12, C17
C20
C21
C22
C23
R1
R2
Fig 7.
American Technical Ceramics type 100B or capacitor of same quality.
C1
The striplines are on a double copper-clad Taconic RF35 Printed-Circuit Board (PCB) with ε
The drawing is not to scale.
See
Component layout
List of components (see
Table 8
C2
for list of components.
C5
C6
C7
C8
C22
R1
Description
multilayer ceramic chip capacitor 5.6 pF
multilayer ceramic chip capacitor 0.5 pF
multilayer ceramic chip capacitor 0.6 pF
multilayer ceramic chip capacitor 100 nF
multilayer ceramic chip capacitor 15 pF
multilayer ceramic chip capacitor 220 nF
multilayer ceramic chip capacitor 10 pF
multilayer ceramic chip capacitor 0.7 pF
multilayer ceramic chip capacitor 20 pF
tantalum capacitor
electrolytic capacitor
SMD resistor
SMD resistor
C3
R2
Figure 6
All information provided in this document is subject to legal disclaimers.
C4
and
Rev. 02 — 14 April 2010
C9
Figure
7)
Value
10 μF; 35 V
220 μF; 35 V
3.3 Ω
5.1 Ω
C15
C10
C16
C11
C17
C12
C18
C13
[1]
[1]
[1]
[1]
[1]
[1]
[1]
C19
C14
Remarks
TDK 1206 or capacitor of same quality
Murata 0603 or capacitor of same quality
AVX 0805 or capacitor of same quality
C20
BLF6G22LS-75
r
= 3.5 and thickness = 0.76 mm.
Power LDMOS transistor
C23
© NXP B.V. 2010. All rights reserved.
001aah572
C21
6 of 11