BLF6G22LS-75,118 NXP Semiconductors, BLF6G22LS-75,118 Datasheet - Page 5

• Manufacturer Part Number: BLF6G22LS-75,118
• Description: TRANS BASESTATION 2-LDMOST
• Manufacturer: NXP Semiconductors

Specifications of BLF6G22LS-75,118

• Package / Case: SOT502B
• Transistor Type: LDMOS
• Frequency: 2.11GHz
• Gain: 18.7dB
• Voltage - Rated: 65V
• Current Rating: 18A
• Current - Test: 690mA
• Voltage - Test: 28V
• Power - Output: 17W
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.07 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 13 V
• Continuous Drain Current: 39 A
• Maximum Operating Temperature: + 225 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934061559118; BLF6G22LS-75 /T3; BLF6G22LS-75 /T3

NXP Semiconductors
8. Test information
BLF6G22LS-75_2
Product data sheet
Fig 4.
Fig 6.
(dB)
G
INPUT
C1
p
20
19
18
17
0
V
f
efficiency as functions of average load power;
typical values
The drawing is not to scale.
Test circuit for operation at 800 MHz
2-carrier W-CDMA power gain and drain
2
DS
= 2145 MHz; carrier spacing 10 MHz.
V
= 28 V; I
GG
G
η
D
p
C2
10
Dq
C22
= 690 mA; f
R1
C8
20
C3
C5
C6
C7
R2
1
= 2135 MHz;
30
P
All information provided in this document is subject to legal disclaimers.
L(AV)
001aah569
(W)
C4
40
Rev. 02 — 14 April 2010
60
40
20
0
(%)
C9
η
D
Fig 5.
V
DD
ACPR
IMD3,
(dBc)
−25
−35
−45
−55
C10
C15
0
V
f
2-carrier W-CDMA adjacent power channel
ratio and third order intermodulation distortion
as functions of average load power; typical
values
2
DS
C11
= 2145 MHz; carrier spacing 10 MHz.
C16
= 28 V; I
C12
C17
C23
10
C13
Dq
C18
= 690 mA; f
C19
BLF6G22LS-75
C14
C20
20
Power LDMOS transistor
1
= 2135 MHz;
ACPR
IMD3
30
© NXP B.V. 2010. All rights reserved.
P
L(AV)
001aah570
(W)
001aah571
OUTPUT
40
C21
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