BLF6G10-45,135 NXP Semiconductors, BLF6G10-45,135 Datasheet - Page 7

• Manufacturer Part Number: BLF6G10-45,135
• Description: TRANS LDMOS 1GHZ SOT608A
• Manufacturer: NXP Semiconductors

Specifications of BLF6G10-45,135

• Package / Case: SOT-608A
• Transistor Type: LDMOS
• Frequency: 922.5MHz
• Gain: 22.5dB
• Voltage - Rated: 65V
• Current Rating: 13A
• Current - Test: 350mA
• Voltage - Test: 28V
• Power - Output: 1W
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.2 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: - 0.5 V, 13 V
• Continuous Drain Current: 13 A
• Maximum Operating Temperature: + 225 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934060888135; BLF6G10-45 /T3; BLF6G10-45 /T3

NXP Semiconductors
Table 8.
All capacitors should be soldered vertically.
[1]
[2]
BLF6G10-45_2
Product data sheet
Component
C1
C2
C3
C4
C5
C6
C7
C8, C11, C14
C9, C10, C12, C13
C15
C16
F1
Q3
R1
R2
Fig 7.
American Technical Ceramics type 100B or capacitor of same quality.
TDK or capacitor of same quality.
The striplines are on a double copper-clad Taconic RF35 Printed-Circuit Board (PCB) with ε
See
Component layout for 920 MHz and 960 MHz test circuit for 2-carrier W-CDMA
List of components (see
Table 8
for list of components.
Description
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
Electrolytic capacitor
Ferrite SMD bead
BLF6G10-45
SMD resistor
SMD resistor
C1
C8
Figure 6
C2 C3
C9
C10
and
R1
Rev. 02 — 20 January 2010
C11
C4
Figure
7).
330 nF; 50 V
Value
3.0 pF
1 pF
6.2 pF
2 pF
1.0 pF
6.8 pF
6.8 pF
68 pF
4.5 μF; 50 V
220 μF
-
-
4.7 Ω; 0.1 W
6.8 Ω; 0.1 W
C12 C13
C5
C14
C6
F1
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[2]
[2]
C15
Remarks
Ferroxcube BDS 3/3/8.9-4S2 or equivalent
R2
−
+
C16
C7
r
= 3.5 and thickness = 0.76 mm.
Power LDMOS transistor
BLF6G10-45
001aah533
© NXP B.V. 2010. All rights reserved.
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