BLF544,112 NXP Semiconductors, BLF544,112 Datasheet
BLF544,112
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BLF544
BLF544
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BLF544,112 Summary of contents
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DISCRETE SEMICONDUCTORS DATA SHEET BLF544 UHF power MOS transistor Product specification Supersedes data of 1998 Jan 21 M3D076 2003 Sep 18 ...
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Philips Semiconductors UHF power MOS transistor FEATURES High power gain Easy power control Good thermal stability Gold metallization ensures excellent reliability Designed for broadband operation. APPLICATIONS Communication transmitters in the UHF frequency range. DESCRIPTION N-channel enhancement mode vertical D-MOS power ...
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Philips Semiconductors UHF power MOS transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER V drain-source voltage DS V gate-source voltage GS I drain current (DC total power dissipation tot T storage ...
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Philips Semiconductors UHF power MOS transistor CHARACTERISTICS unless otherwise specified. j SYMBOL PARAMETER V drain-source breakdown voltage (BR)DSS I drain-source leakage current DSS I gate-source leakage current GSS V gate-source threshold voltage GSth V gate-source voltage ...
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Philips Semiconductors UHF power MOS transistor 4 handbook, halfpage T.C (mV/ Fig.4 Temperature coefficient of gate-source voltage as a function of drain current; typical values. 2 handbook, ...
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Philips Semiconductors UHF power MOS transistor 40 handbook, halfpage C rs (pF MHz. GS Fig.8 Feedback capacitance as a function of drain-source voltage; typical values. APPLICATION INFORMATION T ...
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Philips Semiconductors UHF power MOS transistor 20 handbook, halfpage G p (dB Class-B operation mA 4.3 j6.3 ...
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Philips Semiconductors UHF power MOS transistor List of components (see Figs 11 and 12). COMPONENT DESCRIPTION C1, C6, C11, C17 multilayer ceramic chip capacitor; note 1 C2 multilayer ceramic chip capacitor; note 2 C3, C5 film dielectric trimmer C4 multilayer ...
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Philips Semiconductors UHF power MOS transistor handbook, full pagewidth mounting screw straps Dimensions in mm. The circuit and components are situated on one side of the printed circuit board, the other side being fully metallized, to ...
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Philips Semiconductors UHF power MOS transistor handbook, full pagewidth input 960 MHz. 2003 Sep 18 D.U. BLF544 C10 Fig.13 ...
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Philips Semiconductors UHF power MOS transistor List of components (see Figs 12 and 13) COMPONENT DESCRIPTION C1 multilayer ceramic chip capacitor; note 1 C2 multilayer ceramic chip capacitor; note 2 C3, C5, C16, C18 film dielectric trimmer C4 multilayer ceramic ...
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Philips Semiconductors UHF power MOS transistor 5 handbook, halfpage 200 Class-B operation mA Fig.14 Input impedance as ...
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Philips Semiconductors UHF power MOS transistor BLF544 scattering parameters mA; note (MHz 0.99 14.0 10 0.98 27.6 20 0.93 52.0 30 0.88 72.0 ...
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Philips Semiconductors UHF power MOS transistor PACKAGE OUTLINE Flanged ceramic package; 2 mounting holes; 6 leads DIMENSIONS (millimetre dimensions are derived from the original inch dimensions UNIT 6.81 3.18 2.13 ...
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Philips Semiconductors UHF power MOS transistor DATA SHEET STATUS DATA SHEET PRODUCT LEVEL (1) STATUS STATUS I Objective data Development II Preliminary data Qualification III Product data Production Notes 1. Please consult the most recently issued data sheet before initiating ...
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Philips Semiconductors – a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com. © Koninklijke Philips Electronics N.V. 2003 All rights are reserved. Reproduction in whole or in part is prohibited ...