BLF6G27-10,112 NXP Semiconductors, BLF6G27-10,112 Datasheet - Page 9

• Manufacturer Part Number: BLF6G27-10,112
• Description: IC WIMAX 2.7GHZ 2-LDMOST
• Manufacturer: NXP Semiconductors

Specifications of BLF6G27-10,112

• Package / Case: SOT975B
• Transistor Type: LDMOS
• Frequency: 2.5GHz
• Gain: 19dB
• Voltage - Rated: 65V
• Current Rating: 3.5A
• Current - Test: 130mA
• Voltage - Test: 28V
• Power - Output: 2W
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.256 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 13 V
• Continuous Drain Current: 3.5 A
• Maximum Operating Temperature: + 225 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934061844112; BLF6G27-10; BLF6G27-10

NXP Semiconductors
BLF6G27-10_BLF6G27-10G
Product data sheet
Table 10.
f
(GHz)
BLF6G27-10
2.50
2.55
2.60
2.65
2.70
BLF6G27-10G
2.50
2.55
2.60
2.65
2.70
Measured test circuit impedances
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 28 February 2011
BLF6G27-10; BLF6G27-10G
Z
(Ω)
5.32 − j8.61
4.85 − j8.09
4.40 − j7.55
3.98 − j7.00
3.59 − j6.43
5.67 − j13.62
5.06 − j12.79
4.55 − j11.98
4.10 − j11.19
3.71 − j10.43
i
WiMAX power LDMOS transistor
Z
(Ω)
9.46 − j6.99
9.44 − j7.41
9.32 − j7.86
9.10 − j8.31
8.77 − j8.75
10.70 − j7.38
10.61 − j8.00
10.38 − j8.63
10.00 − j9.24
9.49 − j9.79
o
© NXP B.V. 2011. All rights reserved.
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