BLF6G27-10,112 NXP Semiconductors, BLF6G27-10,112 Datasheet - Page 11

• Manufacturer Part Number: BLF6G27-10,112
• Description: IC WIMAX 2.7GHZ 2-LDMOST
• Manufacturer: NXP Semiconductors

Specifications of BLF6G27-10,112

• Package / Case: SOT975B
• Transistor Type: LDMOS
• Frequency: 2.5GHz
• Gain: 19dB
• Voltage - Rated: 65V
• Current Rating: 3.5A
• Current - Test: 130mA
• Voltage - Test: 28V
• Power - Output: 2W
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.256 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 13 V
• Continuous Drain Current: 3.5 A
• Maximum Operating Temperature: + 225 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934061844112; BLF6G27-10; BLF6G27-10

NXP Semiconductors
Fig 13. Package outline SOT975C
BLF6G27-10_BLF6G27-10G
Product data sheet
Earless flanged ceramic package; 2 leads
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
inches
UNIT
mm
VERSION
SOT975C
OUTLINE
0.143
0.120
3.63
3.05
A
0.133
0.127
3.38
3.23
b
0.009
0.007
0.23
0.18
c
IEC
A
H
0.258
0.252
6.55
6.40
D
0.273
0.267
6.93
6.78
D
1
0.258
0.252
6.55
6.40
JEDEC
E
All information provided in this document is subject to legal disclaimers.
0
U
D
D
b
0.273
0.267
1
1
6.93
6.78
REFERENCES
E
1
Rev. 3 — 28 February 2011
1
2
0.009
0.007
0.23
0.18
F
w
10.29
10.03
0.405
0.395
JEITA
1
BLF6G27-10; BLF6G27-10G
H
M
scale
A
5
A
F
0.065
1.65
M
L
0.040
0.020
1.02
0.51
L
L
p
E
L
+0.002
p
1
+0.05
0.002
0.05
Q
U
2
10 mm
0.253
0.247
6.43
6.27
U
1
Q
WiMAX power LDMOS transistor
0.253
0.247
6.43
6.27
U
PROJECTION
EUROPEAN
2
0.020
0.51
w
1
E
7
0
7
0
© NXP B.V. 2011. All rights reserved.
ISSUE DATE
08-05-20
08-07-10
SOT975C
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