BLF6G27-10,112 NXP Semiconductors, BLF6G27-10,112 Datasheet - Page 2

• Manufacturer Part Number: BLF6G27-10,112
• Description: IC WIMAX 2.7GHZ 2-LDMOST
• Manufacturer: NXP Semiconductors

Specifications of BLF6G27-10,112

• Package / Case: SOT975B
• Transistor Type: LDMOS
• Frequency: 2.5GHz
• Gain: 19dB
• Voltage - Rated: 65V
• Current Rating: 3.5A
• Current - Test: 130mA
• Voltage - Test: 28V
• Power - Output: 2W
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.256 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 13 V
• Continuous Drain Current: 3.5 A
• Maximum Operating Temperature: + 225 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934061844112; BLF6G27-10; BLF6G27-10

NXP Semiconductors
2. Pinning information
3. Ordering information
4. Limiting values
BLF6G27-10_BLF6G27-10G
Product data sheet
Table 2.
[1]
Table 3.
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Pin
BLF6G27-10 (SOT975B)
1
2
3
BLF6G27-10G (SOT975C)
1
2
3
Type number Package
BLF6G27-10
BLF6G27-10G -
Symbol
V
V
I
T
T
D
stg
j
DS
GS
Connected to flange.
Pinning
Ordering information
Limiting values
Parameter
drain-source voltage
gate-source voltage
drain current
storage temperature
junction temperature
drain
gate
source
drain
gate
source
Description
Name
-
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 28 February 2011
Description
earless flanged ceramic package; 2 leads
earless flanged ceramic package; 2 leads
BLF6G27-10; BLF6G27-10G
Conditions
[1]
[1]
Simplified outline
WiMAX power LDMOS transistor
1
2
1
2
Graphic symbol
-
Min
-
−0.5
-
−65
© NXP B.V. 2011. All rights reserved.
Version
SOT975B
SOT975C
2
2
Max
65
+13
3.5
+150
225
sym112
sym112
1
3
1
3
2 of 15
Unit
V
V
A
°C
°C