ATF-541M4-BLK Avago Technologies US Inc., ATF-541M4-BLK Datasheet

IC ENHANCED MOD SUDIOMORPHIC HEM

ATF-541M4-BLK

Manufacturer Part Number
ATF-541M4-BLK
Description
IC ENHANCED MOD SUDIOMORPHIC HEM
Manufacturer
Avago Technologies US Inc.
Datasheet

Specifications of ATF-541M4-BLK

Gain
17.5dB
Package / Case
4-MiniPak (1412)
Current Rating
120mA
Power - Output
21.4dBm
Frequency
2GHz
Transistor Type
pHEMT FET
Noise Figure
0.5dB
Current - Test
60mA
Voltage - Test
3V
Drain Source Voltage Vds
3V
Continuous Drain Current Id
120mA
Power Dissipation Pd
360mW
Noise Figure Typ
0.5dB
Rf Transistor Case
MiniPak
No. Of Pins
4
Frequency Max
10GHz
Drain Current Idss Max
60mA
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
Q2380948
ATF-541M4
Low Noise Enhancement Mode Pseudomorphic HEMT
in a Miniature Leadless Package
Data Sheet
Description
Avago Technologies’ ATF­‑541M4 is a high linearity, low
noise, single supply E‑PHEMT housed in a miniature lead‑
less package.
The ATF­‑541M4’s small size and low profile makes it ideal
for the design of hybrid module and other space‑con‑
straint devices.
The device can be used in applications such as TMA and
front end LNA for Cellular/PCS and WCDMA base stations,
LNA and driver amplifiers for Wireless Data and 802.11b
WLAN.
In addition, the device’s superior RF­ performance at higher
frequency makes it an ideal candidate for high frequency
applications such as WLL, 802.11a WLAN, 5–6 GHz UNII
and HIPERLAN applications.
MiniPak 1.4 mm x 1.2 mm Package
Pin Connections and Package Marking
Note:
Top View. Package marking provides orientation, product identifica‑
tion and date code.
“R” = Device Type Code
“x” = Date code character. A different character is assigned for each
month and year.
Source
Pin 2
Gate
Pin 3
Rx
Drain
Pin 4
Source
Pin 1
Features
• High linearity performance
• Single Supply Enhancement Mode Technology
• Very low noise figure
• Excellent uniformity in product specifications
• 800 micron gate width
• Miniature leadless package
• Tape‑and‑Reel packaging option available
Specifications
2 GHz; 3V, 60 mA (Typ.)
• 35.8 dBm output 3
• 21.4 dBm output power at 1 dB gain compression
• 0.5 dB noise figure
• 17.5 dB associated gain
Applications
• Low Noise Amplifier and Driver Amplifier for Cellular/
• LNA and Driver Amplifier for WLAN, WLL/RLL and
• General purpose discrete E‑PHEMT for ultra low noise
Note:
1. Enhancement mode technology requires positive Vgs, thereby
1.4 mm x 1.2 mm x 0.7 mm
PCS and WCDMA Base Stations
MMDS applications
applications in the 450 MHz to 10 GHz frequency range
eliminating the need for the negative gate voltage associated with
conventional depletion mode devices.
rd
order intercept
[1]

Related parts for ATF-541M4-BLK

ATF-541M4-BLK Summary of contents

Page 1

... Avago Technologies’ ATF­‑541M4 is a high linearity, low noise, single supply E‑PHEMT housed in a miniature lead‑ less package. The ATF­‑541M4’s small size and low profile makes it ideal for the design of hybrid module and other space‑con‑ straint devices. ...

Page 2

... ATF-541M4 Absolute Maximum Ratings [1] Symbol Parameter V Drain‑Source Voltage [ Gate‑Source Voltage [ Gate Drain Voltage [ Drain Current [ Gate Current [ Total Power Dissipation [3] diss P RF­ Input Power [5] in max. T Channel Temperature CH T Storage Temperature STG θ Thermal Resistance [4] jc 120 0.7V 100 0 ...

Page 3

... ATF-541M4 Electrical Specifications T = 25°C, RF­ parameters measured in a test circuit for a typical device A Symbol Parameter and Test Condition Vgs Operational Gate Voltage Vth Threshold Voltage Idss Saturated Drain Current Gm Transconductance Igss Gate Leakage Current NF­ Noise F­igure [1] Gain Gain [1] OIP3 ...

Page 4

... ATF-541M4 Typical Performance Curves 0.60 0.55 0.50 0.45 0.40 0. 100 I (mA) d [1] Figure 6. Fmin vs GHz Gain OIP3 35 P1dB 100 I (mA) d Figure 9. Gain, OIP3 & P1dB vs. I Tuned ds for Max OIP3 and Min NF at 900 MHz, [ Notes: 1. F­min and associated gain at minimum noise figure (Ga) values are based on a set of 16 noise figure measurements made at 16 different im‑ ...

Page 5

... FREQUENCY (GHz) Figure 15. P1dB vs. Freq. and Temperature Tuned for Max OIP3 and Min ATF-541M4 Output Reflection Coefficient Parameters Tuned for Maximum Output IP3 ; Gamma Gamma [2] [2] Freq Out_Mag. Out_Mag. (GHz) (Mag) (Degrees) 0.9 0.006 23 2.0 0.314 ‑167 3.9 0.321 134 5 ...

Page 6

... ATF-541M4 Typical Scattering Parameters, V Freq GHz Mag. Ang. dB 0.1 0.99 ‑16.4 27.62 0.5 0.88 ‑71.2 25.51 0.9 0.79 ‑107.2 22.76 1.0 0.77 ‑114.0 22.07 1.5 0.73 ‑137.2 19.26 1.9 0.71 ‑150.1 17.48 2.0 0.70 ‑155.1 16.94 2.5 0.69 ‑168.4 15.19 3.0 0.69 ‑ ...

Page 7

... ATF-541M4 Typical Scattering Parameters, V Freq GHz Mag. Ang. dB 0.1 0.99 ‑17.6 28.36 0.5 0.87 ‑74.7 26.04 0.9 0.78 ‑110.7 23.13 1.0 0.76 ‑117.6 22.42 1.5 0.72 ‑140.1 19.54 1.9 0.70 ‑152.6 17.73 2.0 0.70 ‑157.5 17.19 2.5 0.69 ‑170.4 15.45 3.0 0.69 ‑ ...

Page 8

... ATF-541M4 Typical Scattering Parameters, V Freq GHz Mag. Ang. dB 0.1 0.97 ‑17.9 28.61 0.5 0.85 ‑76.2 26.21 0.9 0.77 ‑112.1 23.27 1.0 0.75 ‑119.2 22.55 1.5 0.71 ‑142.2 19.65 1.9 0.70 ‑154.9 17.83 2.0 0.69 ‑159.5 17.30 2.5 0.69 ‑171.1 15.53 3.0 ...

Page 9

... ATF-541M4 Typical Scattering Parameters, V Freq GHz Mag. Ang. dB 0.1 0.99 ‑17.5 28.39 0.5 0.87 ‑74.8 26.07 0.9 0.78 ‑110.7 23.18 1.0 0.76 ‑117.5 22.47 1.5 0.72 ‑141.4 19.60 1.9 0.70 ‑154.3 17.79 2.0 0.69 ‑159.0 17.25 2.5 0.69 ‑170.1 15.50 3.0 0.69 ‑ ...

Page 10

... These parameters are typical for a surface mount assembly process for the ATF­‑541M4 general guide‑ line, the circuit board and compo‑ nents should only be exposed to the minimum temperatures and times the necessary to achieve a uniform reflow of solder ...

Page 11

... ESD damage. F­or circuit applications in which the ATF­‑541M4 is used as an input or output stage with close coupling to an external antenna, the device should be protected from high volt‑ age spikes due to human contact with the antenna. A good practice, illus‑ ...

Page 12

... Vdd Figure 1. Typical ATF-541M4 LNA with Passive Biasing. Bias Networks One of the major advantages of the enhancement mode technology is that it allows the designer to be able to dc ground the source leads and then merely apply a positive voltage on the gate to set the desired amount of quiescent drain current Id ...

Page 13

... Figure 2. Typical ATF-541M4 LNA with Active Biasing and R2 provide a constant voltage source at the base of a PNP transistor at Q2. The constant voltage at the base raised by 0.7 volts at the emit‑ ter. The constant emitter voltage plus the regulated V supply are present DD across resistor R3. Constant voltage across R3 provides a constant current supply for the drain current ...

Page 14

... T=0.15 mil TanD=0 Rough=0 mil For Further Information The information presented here is an introduction to the use of the ATF­‑ 541M4 enhancement mode PHEMT. More detailed application circuit in‑ formation is available from Avago Technologies. Consult the web page or your local Avago Technologies sales representative ...

Page 15

... Ordering Information Part Number No. of Devices ATF­‑541M4‑TR1 3000 ATF­‑541M4‑TR2 10000 ATF­‑541M4‑BLK 100 MiniPak Package Outline Drawing 1.44 (0.058) 1.40 (0.056) Rx 1.20 (0.048) 1.16 (0.046) Top view 0.70 (0.028) 0.58 (0.023) Side view ...

Page 16

Device Orientation for Outline 4T, MiniPak 1412 REEL CARRIER TAPE USER FEED DIRECTION COVER TAPE Tape Dimensions DESCRIPTION CAVITY LENGTH WIDTH DEPTH PITCH BOTTOM HOLE DIAMETER PERFORATION DIAMETER PITCH POSITION CARRIER TAPE WIDTH THICKNESS COVER TAPE ...

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