BF1206,115 NXP Semiconductors, BF1206,115 Datasheet - Page 6

• Manufacturer Part Number: BF1206,115
• Description: MOSFET N-CH DUAL GATE 6V SOT363
• Manufacturer: NXP Semiconductors

Specifications of BF1206,115

• Package / Case: SC-70-6, SC-88, SOT-363
• Transistor Type: N-Channel Dual Gate
• Frequency: 400MHz
• Gain: 30dB
• Voltage - Rated: 6V
• Current Rating: 30mA
• Noise Figure: 1.3dB
• Current - Test: 18mA
• Voltage - Test: 5V
• Configuration: Dual Dual Gate
• Continuous Drain Current: 30 mA
• Drain-source Breakdown Voltage: 6 V
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Power Dissipation: 180 mW
• Transistor Polarity: N-Channel
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Output: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934057297115; BF1206; BF1206

NXP Semiconductors
GRAPHS FOR AMPLIFIER a
2003 Nov 17
handbook, halfpage
Dual N-channel dual-gate MOS-FET
(1) V
(2) V
(3) V
(4) V
Fig.3
V
DS
(mA)
I D
= 5 V; T
30
20
10
G2-S
G2-S
G2-S
G2-S
0
0
Transfer characteristics; typical values;
amplifier a.
= 4 V.
= 3.5 V.
= 3 V.
= 2.5 V.
j
= 25 C.
0.5
(5) V
(6) V
(7) V
1
G2-S
G2-S
G2-S
(2)
(3)
= 2 V.
= 1.5 V.
= 1 V.
(1)
1.5
V G1-S (V)
(4)
(5)
(6)
(7)
MLE258
2
6
handbook, halfpage
Fig.4
V
(1) V
(2) V
(3) V
(4) V
G2-S
(mA)
I D
32
24
16
8
0
= 4 V; T
G1-S
G1-S
G1-S
G1-S
0
Output characteristics; typical values;
amplifier a.
= 1.5 V.
= 1.4 V.
= 1.3 V.
= 1.2 V.
j
= 25 C.
2
(5) V
(6) V
(7) V
G1-S
G1-S
G1-S
4
= 1.1 V.
= 1 V.
= 0.9 V.
Product specification
(1)
(2)
(3)
(4)
(5)
(6)
(7)
V DS (V)
BF1206
MLE259
6