BF1206,115 NXP Semiconductors, BF1206,115 Datasheet - Page 10

• Manufacturer Part Number: BF1206,115
• Description: MOSFET N-CH DUAL GATE 6V SOT363
• Manufacturer: NXP Semiconductors

Specifications of BF1206,115

• Package / Case: SC-70-6, SC-88, SOT-363
• Transistor Type: N-Channel Dual Gate
• Frequency: 400MHz
• Gain: 30dB
• Voltage - Rated: 6V
• Current Rating: 30mA
• Noise Figure: 1.3dB
• Current - Test: 18mA
• Voltage - Test: 5V
• Configuration: Dual Dual Gate
• Continuous Drain Current: 30 mA
• Drain-source Breakdown Voltage: 6 V
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Power Dissipation: 180 mW
• Transistor Polarity: N-Channel
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Output: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934057297115; BF1206; BF1206

NXP Semiconductors
2003 Nov 17
handbook, halfpage
handbook, halfpage
Dual N-channel dual-gate MOS-FET
V
Fig.15 Input admittance as a function of frequency;
V
Fig.17 Forward transfer admittance and phase as
DS
DS
(mS)
(mS)
Y is
10
y fs
10
10
= 5 V; V
= 5 V; V
10
10
−1
1
1
2
2
10
10
typical values; amplifier a.
a function of frequency; typical values;
amplifier a.
G2
G2
= 4 V; I
= 4 V; I
D
D
= 18 mA; T
= 18 mA; T
10
10
2
2
amb
−ϕ fs
amb
b is
g is
y fs
= 25 C.
= 25 C.
f (MHz)
f (MHz)
MLE270
MLE268
10
10
3
3
−10
(deg)
−10
−1
ϕ fs
2
10
handbook, halfpage
handbook, halfpage
V
Fig.16 Reverse transfer admittance and phase as
V
Fig.18 Output admittance as a function of
DS
DS
(mS)
(μS)
Y os
10
10
y rs
10
10
= 5 V; V
= 5 V; V
10
10
−1
−2
1
1
3
2
10
10
a function of frequency; typical values;
amplifier a.
frequency; typical values; amplifier a.
G2
G2
= 4 V; I
= 4 V; I
D
D
= 18 mA; T
= 18 mA; T
10
10
2
2
amb
amb
b os
g os
ϕ rs
y rs
= 25 C.
= 25 C.
f (MHz)
f (MHz)
Product specification
BF1206
MLE269
MLE271
10
10
3
3
−10
(deg)
−10
−10
−1
ϕ rs
3
2