BF1206 NXP Semiconductors, BF1206 Datasheet
BF1206
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BF1206 Summary of contents
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... DATA SHEET handbook, halfpage BF1206 Dual N-channel dual-gate MOS-FET Product specification DISCRETE SEMICONDUCTORS MBD128 2003 Nov 17 ...
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... V supply voltage, such as digital and analog television tuners. DESCRIPTION The BF1206 is a combination of two different dual gate MOS-FET amplifiers with shared source and gate 2 leads. The source and substrate are interconnected. Internal bias circuits enable DC stabilization and a very good cross-modulation performance during AGC ...
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... THERMAL CHARACTERISTICS SYMBOL R thermal resistance from junction to soldering point th j-s 2003 Nov 17 CAUTION PACKAGE DESCRIPTION plastic surface mounted package; 6 leads CONDITIONS 107 C; note PARAMETER 3 Product specification BF1206 VERSION SOT363 MIN. MAX. UNIT 10 mA 10 mA ...
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... T s (°C) CONDITIONS G1 G1-S amp G2-S DS amp G2 G1-S G2 G2-S G1 MIN G1 G2 0.5 S- 0.5 S-G2 = 100 0 100 0. k note 150 k note 1 G Product specification BF1206 MAX. UNIT 1 ...
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... S 1.3 1.6 opt ; note 1 opt ; note 1 opt ; note MHz; w 90 92 102 105 Product specification BF1206 MAX. UNIT 48 mS 2.9 pF pF dB 1.9 dB 2.2 dB dB dB dB dBV dBV dBV ...
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... V G1-S ( G2-S = 1 (mA G2 1.5 V. (5) V G1-S G1-S ( 1.4 V. (6) V G1-S G1-S ( 1.3 V. (7) V G1-S G1-S ( 1.2 V. G1-S Fig.4 Output characteristics; typical values; amplifier a. Product specification BF1206 MLE259 (1) (2) (3) (4) (5) (6) ( ( 0.9 V. ...
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... V G2-S G2-S ( 2.5 V. G2-S Fig.6 Forward transfer admittance as a function of drain current; typical values; amplifier (mA G2 k (connected see Fig.35 Fig.8 Drain current as a function of gate 1 supply voltage (V ); typical values; amplifier a. GG Product specification BF1206 MLE261 (3) (2) (1) ( (mA 1 MLE263 (V) ...
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... Nov 17 MLE288 handbook, halfpage (1) (2) (3) (4) (5) (6) ( (V) ); see Fig.35 100 k 120 k 150 k. G1 ( Fig.10 Drain current as a function of gate 2 8 Product specification (mA k (connected ( 3 4 voltage; typical values; amplifier a. BF1206 MLE292 (1) (2) (3) (4) ( G2-S (V) ); see Fig.35. GG ...
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... Fig.14 Drain current as a function of gain 9 120 V unw (dBμV) 110 100 gain reduction (dB k MHz C; see Fig.35 function of gain reduction; typical values; amplifier (mA gain reduction (dB k MHz reduction; typical values; amplifier a. Product specification BF1206 MLE266 MHz; unw MLE267 C; amb ...
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... V Fig.18 Output admittance as a function (μS) ϕ mA amb a function of frequency; typical values; amplifier (mS −1 10 − mA amb frequency; typical values; amplifier a. Product specification BF1206 MLE269 −10 3 ϕ rs (deg) −10 2 −10 − (MHz) MLE271 (MHz) ...
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... BF1206 s 22 ANGLE (deg) 2.07 4.16 8.24 12.32 16.33 20.25 24.20 28.14 32.14 35.76 39. () 26.7 29.7 ...
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... S 1.3 1.4 opt ; note 1 opt ; note 1 opt ; note MHz; w 90 90 100 103 Product specification BF1206 MAX. UNIT 44 mS 2.2 pF pF dB dB dB dBV dBV dBV ...
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... V G1-S ( G2-S = 1 (mA G2 1.5 V. (5) V G1-S G1-S ( 1.4 V. (6) V G1-S G1-S ( 1.3 V. (7) V G1-S G1-S ( 1.2 V. G1-S Fig.20 Output characteristics; typical values; amplifier b. Product specification BF1206 MLE273 (1) (2) (3) (4) (5) (6) ( ( 0.9 V. ...
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... V G2-S G2-S ( 2.5 V. G2-S Fig.22 Forward transfer admittance as a function of drain current; typical values; amplifier (mA G2 150 k (connected see Fig.35 Fig.24 Drain current as a function of gate 1 supply voltage (V ); typical values; amplifier b. GG Product specification BF1206 MLE275 (2) (1) (3) ( (mA 1 MLE277 (V) ...
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... Nov 17 MLE278 handbook, halfpage (1) (mA) (2) (3) (4) (5) ( 120 k 100 k k. G1 (1) V ( Fig.26 Drain current as a function of gate 2 15 Product specification 150 k (connected see Fig. 4 voltage; typical values; amplifier b. BF1206 MLE279 (1) (2) (3) (4) ( G2-S (V) ...
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... Fig.30 Drain current as a function of gain 16 120 V unw (dBμV) 110 100 gain reduction (dB 150 k MHz C; see Fig.35 function of gain reduction; typical values; amplifier (mA gain reduction (dB 150 k MHz reduction; typical values; amplifier b. Product specification BF1206 MLE282 MHz; unw MLE283 C; amb ...
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... V Fig.34 Output admittance as a function (μS) ϕ mA amb a function of frequency; typical values; amplifier (mS − mA amb frequency; typical values; amplifier b. Product specification BF1206 MLE285 −10 3 ϕ rs (deg) −10 2 −10 − (MHz) MLE287 (MHz) ...
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... BF1206 s 22 ANGLE (deg) 1.69 3.38 6.72 10.08 13.46 16.83 20.25 23.68 27.22 30.57 34. () 28.8 27.9 ...
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... OUTLINE VERSION IEC SOT363 2003 Nov scale 2.2 1.35 2.2 1.3 0.65 1.8 1.15 2.0 REFERENCES JEDEC JEITA SC- detail 0.45 0.25 0.2 0.2 0.1 0.15 0.15 EUROPEAN PROJECTION Product specification BF1206 SOT363 ISSUE DATE 04-11-08 06-03-16 ...
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... Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. 20 Product specification BF1206 DEFINITION ...
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... NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ standard warranty and NXP Semiconductors’ product specifications. 21 Product specification BF1206 ...
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... Interface, Security and Digital Processing expertise Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. ...