BF1208,115 NXP Semiconductors, BF1208,115 Datasheet - Page 10

• Manufacturer Part Number: BF1208,115
• Description: MOSFET N-CH DUAL GATE SSMINI-6
• Manufacturer: NXP Semiconductors

Specifications of BF1208,115

• Package / Case: SS Mini-6 (SOT-666)
• Transistor Type: N-Channel Dual Gate
• Frequency: 400MHz
• Gain: 32dB
• Voltage - Rated: 6V
• Current Rating: 30mA
• Noise Figure: 1.3dB
• Current - Test: 19mA
• Voltage - Test: 5V
• Configuration: Dual Common Source
• Continuous Drain Current: 30 mA
• Drain-source Breakdown Voltage: 6 V
• Gate-source Breakdown Voltage: 6 V
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Power Dissipation: 180 mW
• Transistor Polarity: N-Channel
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Output: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934058529115; BF1208 T/R; BF1208 T/R

Philips Semiconductors
9397 750 14254
Product data sheet
8.1.2 Scattering parameters for amplifier A
8.1.3 Noise data for amplifier A
Table 9:
V
Table 10:
V
unless otherwise specified.
f
(MHz)
50
100
200
300
400
500
600
700
800
900
1000
f (MHz)
400
800
Fig 16. Amplifier A: output admittance as a function of frequency; typical values
DS(A)
DS(A)
= 5 V; V
= 5 V; V
s
Magnitude
(ratio)
0.991
0.990
0.986
0.980
0.970
0.960
0.948
0.935
0.921
0.908
0.894
V
11
DS(A)
Scattering parameters for amplifier A
Noise data for amplifier A
G2-S
G2-S
= 5 V; V
= 4 V; I
= 4 V; I
NF
1.3
1.4
b
G2-S
Angle
(deg)
os
min
(mS)
3.86
7.73
15.43 2.99
22.98 2.94
30.44 2.89
37.60 2.82
44.62 2.75
51.44 2.67
58.04 2.58
64.41 2.50
70.49 2.40
10
10
, g
Rev. 01 — 16 March 2005
D(A)
D(A)
10
= 4 V; V
os
(dB)
1
1
2
10
= 19 mA; V
= 19 mA; V
s
Magnitude
(ratio)
3.08
3.03
21
DS(B)
= V
ratio
0.718
0.677
opt
G1-S(B)
DS(B)
DS(B)
Angle
(deg)
175.91 0.0009
171.76 0.0019
163.68 0.0037
155.54 0.0054
147.55 0.0070
139.76 0.0085
132.16 0.0098
124.70 0.0110
117.39 0.0120
110.20 0.0128
103.31 0.0135
= 0 V; V
= 0 V; V
= 0 V; I
10
2
b
g
os
os
D(A)
s
Magnitude
(ratio)
G1-S(B)
G1-S(B)
12
f (MHz)
= 19 mA
Dual N-channel dual gate MOSFET
(deg)
16.06
37.59
= 0 V; T
= 0 V; T
001aac569
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
10
Angle
(deg)
77.41
78.10
78.39
73.53
68.74
63.64
59.62
55.09
50.79
46.62
42.78
amb
amb
3
= 25 C; typical values.
= 25 C; typical values;
s
Magnitude
(ratio)
0.992
0.991
0.990
0.989
0.986
0.983
0.980
0.977
0.973
0.970
0.967
22
r
0.683
0.681
n
BF1208
( )
Angle
(deg)
10 of 22
1.41
2.81
5.57
8.34
11.08
13.78
16.45
19.10
21.69
24.28
26.87