BF904,215 NXP Semiconductors, BF904,215 Datasheet - Page 6

• Manufacturer Part Number: BF904,215
• Description: MOSFET N-CH 7V 30MA SOT143B
• Manufacturer: NXP Semiconductors

Specifications of BF904,215

• Package / Case: SOT-143, SOT-143B, TO-253AA
• Current Rating: 30mA
• Frequency: 200MHz
• Transistor Type: N-Channel Dual Gate
• Noise Figure: 1dB
• Current - Test: 10mA
• Voltage - Test: 5V
• Configuration: Dual Common Source
• Continuous Drain Current: 30 mA
• Drain-source Breakdown Voltage: 7 V
• Gate-source Breakdown Voltage: 6 V
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Power Dissipation: 200 mW
• Transistor Polarity: N-Channel
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Output: -
• Gain: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934020430215::BF904 T/R::BF904 T/R

NXP Semiconductors
handbook, halfpage
handbook, halfpage
N-channel dual gate MOS-FETs
V
T
V
T
j
(mS)
DS
j
(mA)
G2-S
= 25 C.
y fs
= 25 C.
I D
Fig.10 Forward transfer admittance as a
= 5 V.
Fig.8 Output characteristics; typical values.
20
16
12
40
30
20
10
= 4 V.
8
4
0
0
0
0
function of drain current; typical values.
2
4
4
8
V
G1 S
1.3 V
1.2 V
1.0 V
1.1 V
0.9 V
= 1.4 V
12
6
V
G2 S
16
8
V
I
D
DS
2 V
3.5 V
3 V
2.5 V
= 4 V
MLD269
MLD272
(mA)
(V)
Rev. 06 - 13 November 2007
10
20
handbook, halfpage
handbook, halfpage
V
T
V
V
T
Fig.11 Drain current as a function of gate 1 current;
j
j
DS
DS
G2-S
(mA)
= 25 C.
= 25 C.
( A)
I G1
I D
= 5 V.
= 5 V.
150
100
Fig.9
50
16
12
= 4 V.
0
8
4
0
0
0
typical values.
Gate 1 current as a function of gate 1
voltage; typical values.
0.5
10
1.0
20
BF904; BF904R
1.5
30
V
G2 S
Product specification
2.0
40
= 4 V
V
3.5 V
3 V
2.5 V
2 V
G1 S
I
G1
MLD273
MLD271
( A)
6 of 14
(V)
2.5
50