BF904,215 NXP Semiconductors, BF904,215 Datasheet - Page 4

• Manufacturer Part Number: BF904,215
• Description: MOSFET N-CH 7V 30MA SOT143B
• Manufacturer: NXP Semiconductors

Specifications of BF904,215

• Package / Case: SOT-143, SOT-143B, TO-253AA
• Current Rating: 30mA
• Frequency: 200MHz
• Transistor Type: N-Channel Dual Gate
• Noise Figure: 1dB
• Current - Test: 10mA
• Voltage - Test: 5V
• Configuration: Dual Common Source
• Continuous Drain Current: 30 mA
• Drain-source Breakdown Voltage: 7 V
• Gate-source Breakdown Voltage: 6 V
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Power Dissipation: 200 mW
• Transistor Polarity: N-Channel
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Output: -
• Gain: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934020430215::BF904 T/R::BF904 T/R

NXP Semiconductors
THERMAL CHARACTERISTICS
Notes
1. Device mounted on a printed-circuit board.
2. T
STATIC CHARACTERISTICS
T
Note
1. R
DYNAMIC CHARACTERISTICS
Common source; T
R
R
V
V
V
V
V
V
I
I
I
C
C
C
C
F
j
DSX
G1-SS
G2-SS
SYMBOL
SYMBOL
SYMBOL
y
(BR)G1-SS
(BR)G2-SS
(F)S-G1
(F)S-G2
G1-S(th)
G2-S(th)
th j-a
th j-s
= 25 C unless otherwise specified.
ig1-s
ig2-s
os
rs
N-channel dual gate MOS-FETs
fs
s
G1
is the temperature at the soldering point of the source lead.
connects gate 1 to V
thermal resistance from junction to ambient
thermal resistance from junction to soldering point
forward transfer admittance
input capacitance at gate 1
input capacitance at gate 2
drain-source capacitance
reverse transfer capacitance f = 1 MHz
noise figure
gate 1-source breakdown voltage
gate 2-source breakdown voltage
forward source-gate 1 voltage
forward source-gate 2 voltage
gate 1-source threshold voltage
gate 2-source threshold voltage
drain-source current
gate 1 cut-off current
gate 2 cut-off current
BF904
BF904R
BF904
BF904R
amb
PARAMETER
= 25 C; V
PARAMETER
GG
= 5 V; see Fig.20.
PARAMETER
DS
= 5 V; V
G2-S
pulsed; T
f = 1 MHz
f = 1 MHz
f = 1 MHz
f = 200 MHz; G
f = 800 MHz; G
Rev. 06 - 13 November 2007
= 4 V; I
V
V
V
V
V
V
V
R
V
V
G2-S
G1-S
G2-S
G1-S
G2-S
G1-S
G2-S
G2-S
G1-S
j
G1
= 25 C
D
CONDITIONS
= 120 k ; note 1
= 10 mA; unless otherwise specified.
= V
= V
= V
= V
= 4 V; V
= V
= 4 V; V
= V
= V
S
S
= 2 mS; B
= G
DS
DS
DS
DS
DS
DS
DS
CONDITIONS
= 0; I
= 0; I
= 0; I
= 0; I
= 5 V; I
= 0; V
= 0; V
Sopt
DS
DS
note 1
note 2
T
T
; B
s
s
= 5 V; I
= 5 V;
G1-S
G2-S
S-G1
S-G2
G1-S
G2-S
= 92 C
= 78 C
S
S
D
CONDITIONS
= B
= B
= 20 A
= 10 mA
= 10 mA
= 10 mA
= 10 mA
= 5 V
= 5 V
D
Sopt
Sopt
= 20 A
22
1
1
MIN.
BF904; BF904R
6
6
0.5
0.5
0.3
0.3
8
25
2.2
1.5
1.3
25
1
2
MIN.
TYP.
VALUE
500
550
290
360
Product specification
15
15
1.5
1.5
1
1.2
13
50
50
30
2.6
2
1.6
35
1.5
2.8
MAX.
MAX.
4 of 14
UNIT
K/W
K/W
K/W
K/W
V
V
V
V
V
V
mA
nA
nA
mS
pF
pF
pF
fF
dB
dB
UNIT
UNIT