BF1201WR,115 NXP Semiconductors, BF1201WR,115 Datasheet - Page 6

• Manufacturer Part Number: BF1201WR,115
• Description: MOSFET NCH DUAL GATE 10V SOT343R
• Manufacturer: NXP Semiconductors

Specifications of BF1201WR,115

• Package / Case: CMPAK-4
• Current Rating: 30mA
• Frequency: 400MHz
• Gain: 29dB
• Transistor Type: N-Channel Dual Gate
• Noise Figure: 1dB
• Current - Test: 15mA
• Voltage - Test: 5V
• Configuration: Single Dual Gate
• Continuous Drain Current: 0.03 A
• Drain-source Breakdown Voltage: 10 V
• Gate-source Breakdown Voltage: 6 V
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Power Dissipation: 200 mW
• Transistor Polarity: N-Channel
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Output: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934055961115::BF1201WR T/R::BF1201WR T/R

NXP Semiconductors
2000 Mar 29
handbook, halfpage
handbook, halfpage
N-channel dual-gate PoLo MOS-FETs
V
T
Fig.9
V
R
Fig.11 Drain current as a function of gate 1 (= V
j
DS
G2-S
G1
(mA)
= 25 C.
(mA)
I D
I D
= 5 V; V
connected to V
16
12
25
20
15
10
= 4 V; T
8
4
0
5
0
0
0
Drain current as a function of gate 1 current;
typical values.
and drain supply voltage; typical values.
G2-S
j
= 25 C.
= 4 V.
10
2
GG
; see Fig.21.
R G1 = 39 kΩ
62 kΩ
56 kΩ
47 kΩ
20
4
30
6
V GG = V DS (V)
40
8
I G1 (μA)
68 kΩ
100 kΩ
MCD939
MCD941
82 kΩ
50
10
GG
)
6
handbook, halfpage
handbook, halfpage
V
R
Fig.10 Drain current as a function of gate 1 supply
V
R
Fig.12 Drain current as a function of gate 2
DS
DS
G1
G1
(mA)
(mA)
I D
I D
= 5 V; V
= 62 k (connected to V
= 5 V; T
= 62 k (connected to V
20
16
12
20
16
12
BF1201; BF1201R; BF1201WR
8
4
0
8
4
0
0
0
voltage (= V
voltage; typical values.
j
G2-S
= 25 C.
= 4 V; T
1
j
2
= 25 C.
GG
2
GG
GG
); typical values.
); see Fig.21.
); see Fig.21.
3
4
Product specification
V GG = 5 V
V G2-S (V)
4
V GG (V)
4.5 V
4 V
3.5 V
3 V
MCD942
MCD940
6
5