BF1201WR,115 NXP Semiconductors, BF1201WR,115 Datasheet - Page 15

• Manufacturer Part Number: BF1201WR,115
• Description: MOSFET NCH DUAL GATE 10V SOT343R
• Manufacturer: NXP Semiconductors

Specifications of BF1201WR,115

• Package / Case: CMPAK-4
• Current Rating: 30mA
• Frequency: 400MHz
• Gain: 29dB
• Transistor Type: N-Channel Dual Gate
• Noise Figure: 1dB
• Current - Test: 15mA
• Voltage - Test: 5V
• Configuration: Single Dual Gate
• Continuous Drain Current: 0.03 A
• Drain-source Breakdown Voltage: 10 V
• Gate-source Breakdown Voltage: 6 V
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Power Dissipation: 200 mW
• Transistor Polarity: N-Channel
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Output: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934055961115::BF1201WR T/R::BF1201WR T/R

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This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimers. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.
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R77/02/pp 15
Date of release: 2000 Mar 29