BF1201WR,115 NXP Semiconductors, BF1201WR,115 Datasheet - Page 4

• Manufacturer Part Number: BF1201WR,115
• Description: MOSFET NCH DUAL GATE 10V SOT343R
• Manufacturer: NXP Semiconductors

Specifications of BF1201WR,115

• Package / Case: CMPAK-4
• Current Rating: 30mA
• Frequency: 400MHz
• Gain: 29dB
• Transistor Type: N-Channel Dual Gate
• Noise Figure: 1dB
• Current - Test: 15mA
• Voltage - Test: 5V
• Configuration: Single Dual Gate
• Continuous Drain Current: 0.03 A
• Drain-source Breakdown Voltage: 10 V
• Gate-source Breakdown Voltage: 6 V
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Power Dissipation: 200 mW
• Transistor Polarity: N-Channel
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Output: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934055961115::BF1201WR T/R::BF1201WR T/R

NXP Semiconductors
STATIC CHARACTERISTICS
T
Note
1. R
DYNAMIC CHARACTERISTICS
Common source; T
Note
1. Measured in Fig.21 test circuit.
2000 Mar 29
V
V
V
V
V
V
V
I
I
I
y
C
C
C
C
F
G
X
SYMBOL
SYMBOL
j
DSX
G1-SS
G2-SS
= 25 C; unless otherwise specified.
(BR)DSS
(BR)G1-SS
(BR)G2-SS
(F)S-G1
(F)S-G2
G1-S(th)
G2-S(th)
mod
N-channel dual-gate PoLo MOS-FETs
ig1-ss
ig2-ss
oss
rss
tr
fs

G1
connects G
drain-source breakdown voltage
gate 1-source breakdown voltage
gate 2-source breakdown voltage
forward source-gate 1 voltage
forward source-gate 2 voltage
gate 1-source threshold voltage
gate 2-source threshold voltage
drain-source current
gate 1 cut-off current
gate 2 cut-off current
forward transfer admittance
input capacitance at gate 1
input capacitance at gate 2
output capacitance
reverse transfer capacitance f = 1 MHz
noise figure
power gain
cross-modulation
amb
1
PARAMETER
to V
= 25 C; V
PARAMETER
GG
= 5 V.
G2-S
= 4 V; V
pulsed; T
f = 1 MHz
f = 1 MHz
f = 1 MHz
f = 10.7 MHz; G
f = 400 MHz; Y
f = 800 MHz; Y
f = 200 MHz; G
G
f = 400 MHz; G
G
f = 800 MHz; G
G
input level for k = 1%; f
f
unw
L
L
L
at 0 dB AGC
at 10 dB AGC
at 40 dB AGC
DS
= 0.5 mS; B
= 1 mS; B
= 1 mS; B
= 60 MHz; note 1
= 5 V; I
V
V
V
V
V
V
V
V
note 1
V
V
j
G1-S
G2-S
G1-S
G2-S
G1-S
G2-S
G1-S
G2-S
G2-S
G1-S
= 25 C
D
CONDITIONS
L
L
= V
= V
= V
= V
= V
= 4 V; V
= V
= 4 V; V
= V
= V
= B
= B
= 15 mA; unless otherwise specified.
S
S
S
L
S
S
4
S
= Y
= Y
= B
= 2 mS; B
= 2 mS; B
= 3.3 mS; B
= 20 mS; B
G2-S
DS
DS
DS
DS
DS
DS
DS
L opt
L opt
S opt
S opt
L opt
= 0; I
= 0; I
= 0; I
= 0; I
= 5 V; I
= 0; V
= 0; V
CONDITIONS
;
;
= 0; I
DS
DS
w
;
= 50 MHz;
= 5 V; I
= 5 V; R
BF1201; BF1201R; BF1201WR
G1-S
G2-S
S-G1
S-G2
G1-S
G2-S
S
S
D
D
= B
= B
S
S
= 10 A
= 100 A
= 10 mA
= 10 mA
= 10 mA
= 10 mA
= 0
= B
= 5 V
= 4 V
S opt
S opt
D
G1
S opt
= 100 A
;
;
= 62 k;
;
23










90

105
MIN.
10
6
6
0.5
0.5
0.3
0.3
11


28
2.6
1.1
0.9
15
5
1
1.9
33.5
29
24

95

TYP.
MIN.
Product specification



1.5
1.5
1.0
1.2
19
50
20
35
3.1


30
7
1.8
2.5






MAX.
MAX.
V
V
V
V
V
V
V
mA
nA
nA
mS
pF
pF
pF
fF
dB
dB
dB
dB
dB
dB
dBV
dBV
dBV
UNIT
UNIT