MRFE6S9045NR1 Freescale Semiconductor, MRFE6S9045NR1 Datasheet - Page 7

• Manufacturer Part Number: MRFE6S9045NR1
• Description: MOSFET RF N-CH 10W TO-270-2
• Manufacturer: Freescale Semiconductor

Specifications of MRFE6S9045NR1

• Transistor Type: N-Channel
• Frequency: 880MHz
• Gain: 22.1dB
• Voltage - Rated: 66V
• Current Rating: 10µA
• Current - Test: 350mA
• Voltage - Test: 28V
• Power - Output: 10W
• Package / Case: TO-270-2
• Drain Source Voltage Vds: 66V
• Rf Transistor Case: TO-270
• Termination Type: SMD
• Output Power Pout: 10W
• Peak Reflow Compatible (260 C): Yes
• Transistor Polarity: N Channel
• Rohs Compliant: Yes
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 66V
• Output Power (max): 10W
• Power Gain (typ)@vds: 22.1/20/20dB
• Frequency (max): 1GHz
• Package Type: TO-270
• Pin Count: 3
• Input Capacitance (typ)@vds: 81@28VpF
• Output Capacitance (typ)@vds: 27@28VpF
• Reverse Capacitance (typ): 1.02@28VpF
• Operating Temp Range: -65C to 225C
• Drain Efficiency (typ): 32%
• Mounting: Surface Mount
• Mode Of Operation: 1-Carrier N-CDMA/CW/GSM EDGE
• Number Of Elements: 1
• Vswr (max): 5
• Screening Level: Military
• Filter Terminals: SMD
• Gate-source Voltage: 12V
• Leaded Process Compatible: Yes
• Operating Frequency Max: 880MHz
• Lead Free Status / RoHS Status: Contains lead / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant
• Other names: MRFE6S9045NR1; MRFE6S9045NR1TR

RF Device Data
Freescale Semiconductor
−10
−20
−30
−40
−50
−60
−70
−80
1
Figure 7. Intermodulation Distortion Products
5th Order
V
f2 = 880.1 MHz, Two−Tone Measurements
3rd Order
DD
7th Order
= 28 Vdc, I
P
out
versus Output Power
, OUTPUT POWER (WATTS) PEP
DQ
= 350 mA, f1 = 880 MHz
10
70
65
60
55
50
45
40
35
30
25
20
15
10
Figure 10. Single - Carrier N - CDMA ACPR, ALT1, Power
5
0
1
56
55
54
53
52
51
50
49
48
47
46
V
f = 880 MHz, N−CDMA IS−95 Pilot
Sync, Paging, Traffic Codes 8
Through 13
Gain and Drain Efficiency versus Output Power
DD
G
24
ps
P1dB = 47.38 dBm
(54.7 W)
= 28 Vdc, I
Figure 9. Pulsed CW Output Power versus
η
25
D
TYPICAL CHARACTERISTICS
P3dB = 48.40 dBm (69.18 W)
P
out
DQ
26
, OUTPUT POWER (WATTS) AVG.
100
= 350 mA
27
P
ALT1
in
P6dB = 49.21 dBm (83.36 W)
, INPUT POWER (dBm)
200
Input Power
V
12 μsec(on), 1% Duty Cycle, f = 880 MHz
28
DD
10
= 28 Vdc, I
ACPR
29
−10
−20
−30
−40
−50
−60
−70
30
DQ
0
1
= 350 mA, Pulsed CW
85_C
−30_C
Figure 8. Intermodulation Distortion Products
85_C
85_C
IM3−U
V
Two−Tone Measurements
(f1 + f2)/2 = Center Frequency of 880 MHz
25_C
IM5−L
31
DD
T
= 28 Vdc, P
85_C
C
25_C
= −30_C
32
−30_C
25_C
25_C
−30_C
IM5−U
IM3−L
Ideal
Actual
33
100
out
versus Tone Spacing
TWO−TONE SPACING (MHz)
−5
−10
−15
−20
−25
−30
−35
−40
−45
−50
−55
−60
−65
−70
−75
= 48 W (PEP), I
IM7−L
34
IM7−U
10
DQ
= 350 mA
MRFE6S9045NR1
100
7