MRFE6S9045NR1 Freescale Semiconductor, MRFE6S9045NR1 Datasheet - Page 3

• Manufacturer Part Number: MRFE6S9045NR1
• Description: MOSFET RF N-CH 10W TO-270-2
• Manufacturer: Freescale Semiconductor

Specifications of MRFE6S9045NR1

• Transistor Type: N-Channel
• Frequency: 880MHz
• Gain: 22.1dB
• Voltage - Rated: 66V
• Current Rating: 10µA
• Current - Test: 350mA
• Voltage - Test: 28V
• Power - Output: 10W
• Package / Case: TO-270-2
• Drain Source Voltage Vds: 66V
• Rf Transistor Case: TO-270
• Termination Type: SMD
• Output Power Pout: 10W
• Peak Reflow Compatible (260 C): Yes
• Transistor Polarity: N Channel
• Rohs Compliant: Yes
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 66V
• Output Power (max): 10W
• Power Gain (typ)@vds: 22.1/20/20dB
• Frequency (max): 1GHz
• Package Type: TO-270
• Pin Count: 3
• Input Capacitance (typ)@vds: 81@28VpF
• Output Capacitance (typ)@vds: 27@28VpF
• Reverse Capacitance (typ): 1.02@28VpF
• Operating Temp Range: -65C to 225C
• Drain Efficiency (typ): 32%
• Mounting: Surface Mount
• Mode Of Operation: 1-Carrier N-CDMA/CW/GSM EDGE
• Number Of Elements: 1
• Vswr (max): 5
• Screening Level: Military
• Filter Terminals: SMD
• Gate-source Voltage: 12V
• Leaded Process Compatible: Yes
• Operating Frequency Max: 880MHz
• Lead Free Status / RoHS Status: Contains lead / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant
• Other names: MRFE6S9045NR1; MRFE6S9045NR1TR

RF Device Data
Freescale Semiconductor
Table 5. Electrical Characteristics
Typical GSM EDGE Performances (In Freescale GSM EDGE Test Fixture Optimized for 920 - 960 MHz, 50 ohm system) V
I
Typical CW Performances (In Freescale GSM Test Fixture Optimized for 920 - 960 MHz, 50 ohm system) V
P
Typical Performances (In Freescale Test Fixture, 50 ohm system) V
DQ
out
Power Gain
Drain Efficiency
Error Vector Magnitude
Spectral Regrowth at 400 kHz Offset
Spectral Regrowth at 600 kHz Offset
Power Gain
Drain Efficiency
Input Return Loss
P
Video Bandwidth @ 48 W PEP P
Gain Flatness in 35 MHz Bandwidth @ P
Gain Variation over Temperature
Output Power Variation over Temperature
out
= 350 mA, P
(f = 940 MHz)
(Tone Spacing from 100 kHz to VBW)
ΔIMD3 = IMD3 @ VBW frequency - IMD3 @ 100 kHz <1 dBc (both
sidebands)
( - 30°C to +85°C)
( - 30°C to +85°C)
= 45 W, f = 920 - 960 MHz
@ 1 dB Compression Point
out
= 16 W Avg., f = 920 - 960 MHz, GSM EDGE Signal
Characteristic
out
where IM3 = - 30 dBc
(T
out
C
= 25°C unless otherwise noted)
= 10 W Avg.
DD
= 28 Vdc, I
(continued)
Symbol
ΔP1dB
P1dB
EVM
VBW
SR1
SR2
G
G
IRL
ΔG
η
η
G
ps
ps
D
D
F
DQ
= 350 mA, 865 - 900 MHz Bandwidth
Min
—
—
—
—
—
—
—
—
—
—
—
—
—
0.006
0.011
0.72
Typ
- 62
- 78
- 12
1.5
20
46
20
68
52
10
DD
= 28 Vdc, I
Max
MRFE6S9045NR1
—
—
—
—
—
—
—
—
—
—
—
—
—
DQ
DD
= 350 mA,
= 28 Vdc,
dBm/°C
dB/°C
MHz
Unit
dBc
dBc
dB
dB
dB
dB
W
%
%
%
3