MRFE6S9045NR1 Freescale Semiconductor, MRFE6S9045NR1 Datasheet - Page 14

• Manufacturer Part Number: MRFE6S9045NR1
• Description: MOSFET RF N-CH 10W TO-270-2
• Manufacturer: Freescale Semiconductor

Specifications of MRFE6S9045NR1

• Transistor Type: N-Channel
• Frequency: 880MHz
• Gain: 22.1dB
• Voltage - Rated: 66V
• Current Rating: 10µA
• Current - Test: 350mA
• Voltage - Test: 28V
• Power - Output: 10W
• Package / Case: TO-270-2
• Drain Source Voltage Vds: 66V
• Rf Transistor Case: TO-270
• Termination Type: SMD
• Output Power Pout: 10W
• Peak Reflow Compatible (260 C): Yes
• Transistor Polarity: N Channel
• Rohs Compliant: Yes
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 66V
• Output Power (max): 10W
• Power Gain (typ)@vds: 22.1/20/20dB
• Frequency (max): 1GHz
• Package Type: TO-270
• Pin Count: 3
• Input Capacitance (typ)@vds: 81@28VpF
• Output Capacitance (typ)@vds: 27@28VpF
• Reverse Capacitance (typ): 1.02@28VpF
• Operating Temp Range: -65C to 225C
• Drain Efficiency (typ): 32%
• Mounting: Surface Mount
• Mode Of Operation: 1-Carrier N-CDMA/CW/GSM EDGE
• Number Of Elements: 1
• Vswr (max): 5
• Screening Level: Military
• Filter Terminals: SMD
• Gate-source Voltage: 12V
• Leaded Process Compatible: Yes
• Operating Frequency Max: 880MHz
• Lead Free Status / RoHS Status: Contains lead / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant
• Other names: MRFE6S9045NR1; MRFE6S9045NR1TR

Application Notes
• AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
• AN3263: Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over - Molded Plastic Packages
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
MRFE6S9045NR1
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Oct. 2007
Date
• Initial Release of Data Sheet
PRODUCT DOCUMENTATION
REVISION HISTORY
Description
Freescale Semiconductor
RF Device Data