BLF244,112 NXP Semiconductors, BLF244,112 Datasheet - Page 9

• Manufacturer Part Number: BLF244,112
• Description: TRANSISTOR RF DMOS SOT123A
• Manufacturer: NXP Semiconductors

Specifications of BLF244,112

• Package / Case: SOT-123A
• Transistor Type: N-Channel
• Frequency: 175MHz
• Gain: 17dB
• Voltage - Rated: 65V
• Current Rating: 3A
• Current - Test: 25mA
• Voltage - Test: 28V
• Power - Output: 15W
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Resistance Drain-source Rds (on): 1.5 Ohm @ 10 V
• Transistor Polarity: N-Channel
• Configuration: Single Dual Source
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 3 A
• Power Dissipation: 38000 mW
• Maximum Operating Temperature: + 200 C
• Application: VHF
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 65V
• Output Power (max): 15W
• Power Gain (typ)@vds: 17@28V/15@12.5VdB
• Frequency (max): 175MHz
• Package Type: SOT-123A
• Pin Count: 4
• Forward Transconductance (typ): 0.6(Min)S
• Drain Source Resistance (max): 1500@10Vmohm
• Input Capacitance (typ)@vds: 60@28VpF
• Output Capacitance (typ)@vds: 40@28VpF
• Reverse Capacitance (typ): 4.5@28VpF
• Operating Temp Range: -65C to 200C
• Drain Efficiency (typ): 65%
• Mounting: Screw
• Mode Of Operation: CW Class-B
• Number Of Elements: 1
• Power Dissipation (max): 38000mW
• Vswr (max): 50
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-2411; 933817040112; BLF244; BLF244

Philips Semiconductors
List of components (see Fig.13)
Notes
1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality.
2. The striplines are on a double copper-clad printed circuit board, with epoxy fibre-glass dielectric (
3. Refer to Application Information for value.
2003 Oct 13
C1, C12
C2
C3, C4, C9
C5
C6
C7
C8
C10, C11
C13
C14
L1
L2
L3, L4
L5
L6
L7
L8
R1
R2
R3
VHF power MOS transistor
COMPONENT
thickness
1
16
inch.
multilayer ceramic chip capacitor; note 1
multilayer ceramic chip capacitor; note 1
film dielectric trimmer
multilayer ceramic chip capacitor; note 1
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor; note 1
multilayer ceramic chip capacitor; note 1
multilayer ceramic chip capacitor; note 1
solid tantalum capacitor
multilayer ceramic chip capacitor
4 turns enamelled 1 mm copper wire
1 turn enamelled 1 mm copper wire
stripline; note 2
6 turns enamelled 1 mm copper wire
grade 3B Ferroxcube RF choke
2 turns enamelled 1 mm copper wire
4 turns enamelled 1 mm copper wire
metal film resistor; note 3
0.4 W metal film resistor
0.4 W metal film resistor
DESCRIPTION
9
680 nF
20 pF
5 to 60 pF
75 pF
10 nF
100 pF
47 pF
11 pF
2.2 F
100 nF
32 nH
12.2 nH
30
119 nH
19 nH
28.5 nH
1 M
10
VALUE
length 6.3 mm
int. dia. 3 mm
leads 2
int. dia. 5.6 mm
leads 2
15
length 10.4 mm
int. dia. 6 mm
leads 2
length 2.4 mm
int. dia. 3 mm
leads 2
length 8.5 mm
int. dia. 3 mm
leads 2
DIMENSIONS
6 mm
5 mm
5 mm
5 mm
5 mm
5 mm
Product specification
CATALOGUE NO.
2222 809 08003
2222 852 47103
2222 852 47104
4312 020 36640
r
= 4.5),
BLF244