BLF244,112 NXP Semiconductors, BLF244,112 Datasheet - Page 11

• Manufacturer Part Number: BLF244,112
• Description: TRANSISTOR RF DMOS SOT123A
• Manufacturer: NXP Semiconductors

Specifications of BLF244,112

• Package / Case: SOT-123A
• Transistor Type: N-Channel
• Frequency: 175MHz
• Gain: 17dB
• Voltage - Rated: 65V
• Current Rating: 3A
• Current - Test: 25mA
• Voltage - Test: 28V
• Power - Output: 15W
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Resistance Drain-source Rds (on): 1.5 Ohm @ 10 V
• Transistor Polarity: N-Channel
• Configuration: Single Dual Source
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 3 A
• Power Dissipation: 38000 mW
• Maximum Operating Temperature: + 200 C
• Application: VHF
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 65V
• Output Power (max): 15W
• Power Gain (typ)@vds: 17@28V/15@12.5VdB
• Frequency (max): 175MHz
• Package Type: SOT-123A
• Pin Count: 4
• Forward Transconductance (typ): 0.6(Min)S
• Drain Source Resistance (max): 1500@10Vmohm
• Input Capacitance (typ)@vds: 60@28VpF
• Output Capacitance (typ)@vds: 40@28VpF
• Reverse Capacitance (typ): 4.5@28VpF
• Operating Temp Range: -65C to 200C
• Drain Efficiency (typ): 65%
• Mounting: Screw
• Mode Of Operation: CW Class-B
• Number Of Elements: 1
• Power Dissipation (max): 38000mW
• Vswr (max): 50
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-2411; 933817040112; BLF244; BLF244

Philips Semiconductors
2003 Oct 13
handbook, halfpage
handbook, halfpage
VHF power MOS transistor
Class-B operation; V
P
Fig.15 Input impedance as a function of frequency
Class-B operation; V
P
Fig.17 Power gain as function of frequency; typical
L
L
(dB)
G p
= 15 W; T
= 15 W; T
( )
Z i
40
36
32
28
24
20
60
40
20
0
20
20
(series components); typical values.
values.
h
h
= 25 C; R
= 25 C; R
40
40
DS
DS
x i
r i
= 28 V; I
= 28 V; I
th mb-h
th mb-h
60
60
= 0.3 K/W.
= 0.3 K/W.
DQ
DQ
= 25 mA;
= 25 mA;
80
80
100
100
f (MHz)
f (MHz)
MGP166
MGP164
120
120
11
handbook, halfpage
Class-B operation; V
P
Fig.16 Load impedance as a function of frequency
L
( )
= 15 W; T
Z L
25
20
15
10
5
0
20
(series components); typical values.
h
= 25 C; R
40
X L
R L
DS
= 28 V; I
th mb-h
60
= 0.3 K/W.
DQ
= 25 mA;
80
Product specification
100
f (MHz)
BLF244
MGP165
120