BLF244,112 NXP Semiconductors, BLF244,112 Datasheet - Page 4

• Manufacturer Part Number: BLF244,112
• Description: TRANSISTOR RF DMOS SOT123A
• Manufacturer: NXP Semiconductors

Specifications of BLF244,112

• Package / Case: SOT-123A
• Transistor Type: N-Channel
• Frequency: 175MHz
• Gain: 17dB
• Voltage - Rated: 65V
• Current Rating: 3A
• Current - Test: 25mA
• Voltage - Test: 28V
• Power - Output: 15W
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Resistance Drain-source Rds (on): 1.5 Ohm @ 10 V
• Transistor Polarity: N-Channel
• Configuration: Single Dual Source
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 3 A
• Power Dissipation: 38000 mW
• Maximum Operating Temperature: + 200 C
• Application: VHF
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 65V
• Output Power (max): 15W
• Power Gain (typ)@vds: 17@28V/15@12.5VdB
• Frequency (max): 175MHz
• Package Type: SOT-123A
• Pin Count: 4
• Forward Transconductance (typ): 0.6(Min)S
• Drain Source Resistance (max): 1500@10Vmohm
• Input Capacitance (typ)@vds: 60@28VpF
• Output Capacitance (typ)@vds: 40@28VpF
• Reverse Capacitance (typ): 4.5@28VpF
• Operating Temp Range: -65C to 200C
• Drain Efficiency (typ): 65%
• Mounting: Screw
• Mode Of Operation: CW Class-B
• Number Of Elements: 1
• Power Dissipation (max): 38000mW
• Vswr (max): 50
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-2411; 933817040112; BLF244; BLF244

Philips Semiconductors
CHARACTERISTICS
T
V
2003 Oct 13
V
I
I
V
g
R
I
C
C
C
F
j
DSS
GSS
DSX
GS
fs
V
(BR)DSS
GSth
= 25 C unless otherwise specified.
DSon
is
os
rs
VHF power MOS transistor
SYMBOL
GS
group indicator
GROUP
M
C
D
G
H
N
A
B
E
F
K
J
L
drain-source breakdown voltage
drain-source leakage current
gate-source leakage current
gate-source threshold voltage
gate-source voltage difference of
matched devices
forward transconductance
drain-source on-state resistance
on-state drain current
input capacitance
output capacitance
feedback capacitance
noise figure; see Fig.13
MIN.
PARAMETER
2.0
2.1
2.2
2.3
2.4
2.5
2.6
2.7
2.8
2.9
3.0
3.1
3.2
LIMITS
(V)
MAX.
2.1
2.2
2.3
2.4
2.5
2.6
2.7
2.8
2.9
3.0
3.1
3.2
3.3
V
V
V
I
I
I
I
V
V
V
V
I
T
R
D
D
D
D
D
h
GS
GS
GS
GS
GS
GS
GS
th mb-h
= 5 mA; V
= 5 mA; V
= 0.75 A; V
= 0.75 A; V
= 0.5 A; V
= 25 C; f = 175 MHz;
= 0; I
= 0; V
= 20 V; V
= 10 V; V
= 0; V
= 0; V
= 0; V
4
= 0.3 K/W
D
CONDITIONS
DS
DS
DS
DS
GROUP
= 5 mA
DS
DS
DS
= 28 V
= 28 V; f = 1 MHz
= 28 V; f = 1 MHz
= 28 V; f = 1 MHz
DS
GS
DS
W
O
Q
R
U
P
S
T
V
X
Y
Z
DS
= 10 V
= 10 V
= 28 V; R1 = 23
= 10 V
= 10 V
= 10 V
= 0
MIN.
3.3
3.4
3.5
3.6
3.7
3.8
3.9
4.0
4.1
4.2
4.3
4.4
65
2
0.6
MIN.
LIMITS
(V)
0.8
5
60
40
4.5
4.3
Product specification
TYP. MAX. UNIT
BLF244
1
1
4.5
100
1.5
MAX.
3.4
3.5
3.6
3.7
3.8
3.9
4.0
4.1
4.2
4.3
4.4
4.5
V
mA
V
mV
S
A
pF
pF
pF
dB
A