ATF-55143-BLKG Avago Technologies US Inc., ATF-55143-BLKG Datasheet - Page 6

• Manufacturer Part Number: ATF-55143-BLKG
• Description: IC PHEMT 2GHZ 2.7V 10MA SOT-343
• Manufacturer: Avago Technologies US Inc.

Specifications of ATF-55143-BLKG

• Package / Case: SC-70-4, SC-82-4, SOT-323-4, SOT-343
• Transistor Type: pHEMT FET
• Frequency: 2GHz
• Gain: 17.7dB
• Voltage - Rated: 5V
• Current Rating: 100mA
• Noise Figure: 0.6dB
• Current - Test: 10mA
• Voltage - Test: 2.7V
• Power - Output: 14.4dBm
• Configuration: Single Dual Source
• Transistor Polarity: N-Channel
• Power Dissipation: 270 mW
• Drain Source Voltage Vds: 5 V
• Gate-source Breakdown Voltage: - 5 V to 1 V
• Continuous Drain Current: 100 mA
• Maximum Operating Temperature: + 150 C
• Maximum Drain Gate Voltage: - 5 V to 1 V
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 100mA
• Power Dissipation Pd: 270mW
• Noise Figure Typ: 0.6dB
• Rf Transistor Case: SC-70
• No. Of Pins: 4
• Frequency Max: 6GHz
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 516-1869; ATF-55143-BLKG

ATF-55143 Typical Performance Curves, continued
Notes:
1. Measurements at 2 GHz were made on a fixed tuned production test board that was tuned for optimal OIP3 match with reasonable noise figure
2. P1dB measurements are performed with passive biasing. Quiescent drain current, I
6
Figure 21. Gain vs. Temperature and
Frequency with bias at 2.7V, 10 mA.
Figure 24. IIP3 vs. Temperature and
Frequency with bias at 2.7V, 10 mA.
at 2.7 V, 10 mA bias. This circuit represents a trade‑off between optimal noise match, maximum OIP3 match and a realizable match based on
production test board requirements. Measurements taken above and below 2 GHz were made using a double stub tuner at the input tuned for
low noise and a double stub tuner at the output tuned for maximum OIP3. Circuit losses have been de‑embedded from actual measurements.
the drain current may increase or decrease depending on frequency and dc bias point. At lower values of I
B as power output approaches P1dB. This results in higher P1dB and higher PAE (power added efficiency) when compared to a device that is
driven by a constant current source as is typically done with active biasing. As an example, at a V
as a P1dB of +14.5 dBm is approached.
28
23
18
13
16
14
12
10
-2
-4
-6
8
8
6
4
2
0
0
0
1
1
25°C
-40°C
85°C
FREQUENCY (GHz)
FREQUENCY (GHz)
2
2
3
3
4
4
5
5
[1]
25°C
-40°C
85°C
[1]
6
6
Figure 22. Fmin vs. Frequency and
Temperature at 2.7V, 10 mA.
Figure 25. P1dB vs. Temperature and
Frequency with bias at 2.7V, 10 mA.
2.0
1.5
1.0
0.5
16
15
14
13
12
11
10
0
0
0
1
1
25°C
-40°C
85°C
FREQUENCY (GHz)
FREQUENCY (GHz)
2
2
3
3
4
4
dsq
5
5
[1,2]
25°C
-40°C
85°C
, is set with zero RF drive applied. As P1dB is approached,
6
6
DS
= 2.7V and I
Figure 23. OIP3 vs. Temperature and
Frequency with bias at 2.7V, 10 mA.
25
24
23
22
21
20
19
0
dsq
, the device is running close to class
1
dsq
= 5 mA, I
FREQUENCY (GHz)
2
d
3
increases to 15 mA
4
5
25°C
-40°C
85°C
[1]
6