ATF-55143-TR1 Avago Technologies US Inc., ATF-55143-TR1 Datasheet

IC TRANS E-PHEMT 2GHZ SOT-343

ATF-55143-TR1

Manufacturer Part Number
ATF-55143-TR1
Description
IC TRANS E-PHEMT 2GHZ SOT-343
Manufacturer
Avago Technologies US Inc.
Datasheet

Specifications of ATF-55143-TR1

Transistor Type
pHEMT FET
Frequency
2GHz
Gain
17.7dB
Voltage - Rated
5V
Current Rating
100mA
Noise Figure
0.6dB
Current - Test
10mA
Voltage - Test
2.7V
Power - Output
14.4dBm
Package / Case
SC-70-4, SC-82-4, SOT-323-4, SOT-343
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
516-1508-2

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
ATF-55143-TR1
Manufacturer:
AVAGO
Quantity:
110 000
Part Number:
ATF-55143-TR1G
Manufacturer:
AVAGO
Quantity:
19 400
Part Number:
ATF-55143-TR1G
Manufacturer:
AVAGO
Quantity:
60 000
Part Number:
ATF-55143-TR1G
Manufacturer:
AGILENT
Quantity:
179
Part Number:
ATF-55143-TR1G
Manufacturer:
AVGO
Quantity:
20 000
Company:
Part Number:
ATF-55143-TR1G
Quantity:
30 000
Description
Agilent Technologies’s ATF-55143
is a high dynamic range, very low
noise, single supply E-PHEMT
housed in a 4-lead SC-70
(SOT-343) surface mount plastic
package.
The combination of high gain,
high linearity and low noise
makes the ATF-55143 ideal for
cellular/PCS handsets, wireless
data systems (WLL/RLL, WLAN
and MMDS) and other systems in
the 450 MHz to 6 GHz frequency
range.
ESD Machine Model (Class A)
ESD Human Body Model (Class 0)
Refer to Agilent Application Note A004R:
Electrostatic Discharge Damage and Control.
Attention:
Observe precautions for
handling electrostatic
sensitive devices.
Agilent ATF-55143 Low Noise
Enhancement Mode
Pseudomorphic HEMT in a
Surface Mount Plastic Package
Data Sheet
Surface Mount Package
SOT-343
Pin Connections and
Package Marking
SOURCE
Note:
Top View. Package marking provides orientation
and identification
“5F” = Device Code
“x” = Date code character
identifies month of manufacture.
DRAIN
SOURCE
GATE
Features
• High linearity performance
• Single Supply Enhancement Mode
• Very low noise figure
• Excellent uniformity in product
• 400 micron gate width
• Low cost surface mount small
• Tape-and-Reel packaging option
• Lead Free Option Available
Specifications
2 GHz; 2.7V, 10 mA (Typ.)
• 24.2 dBm output 3
• 14.4 dBm output power at 1 dB
• 0.6 dB noise figure
• 17.7 dB associated gain
• Lead-free option available
Applications
• Low noise amplifier for cellular/
• LNA for WLAN, WLL/RLL and
• General purpose discrete E-PHEMT
Note:
1. Enhancement mode technology requires
Technology
specifications
plastic package SOT-343 (4 lead
SC-70)
available
gain compression
PCS handsets
MMDS applications
for other ultra low noise applications
positive Vgs, thereby eliminating the need for
the negative gate voltage associated with
conventional depletion mode devices.
[1]
rd
order intercept

Related parts for ATF-55143-TR1

ATF-55143-TR1 Summary of contents

Page 1

... SC-70 (SOT-343) surface mount plastic package. The combination of high gain, high linearity and low noise makes the ATF-55143 ideal for cellular/PCS handsets, wireless data systems (WLL/RLL, WLAN and MMDS) and other systems in the 450 MHz to 6 GHz frequency range ...

Page 2

... ATF-55143 Absolute Maximum Ratings Symbol Parameter [2] V Drain-Source Voltage DS [2] V Gate-Source Voltage GS [2] V Gate Drain Voltage GD [2] I Drain Current DS [5] I Gate Current GS [3] P Total Power Dissipation diss [ Input Power in max. T Channel Temperature CH T Storage Temperature STG [4] θ Thermal Resistance jc ESD (Human Body Model) ...

Page 3

... ATF-55143 Electrical Specifications T = 25°C, RF parameters measured in a test circuit for a typical device A Symbol Parameter and Test Condition Vgs Operational Gate Voltage Vth Threshold Voltage Idss Saturated Drain Current Gm Transconductance Igss Gate Leakage Current [1] NF Noise Figure [1] Ga Associated Gain rd OIP3 ...

Page 4

... ATF-55143 Typical Performance Curves 2V 2.7V FREQUENCY (GHz) [1] Figure 6. Gain vs. Bias over Frequency 2V 2.7V FREQUENCY (GHz) [1] Figure 9. IIP3 vs. Bias over Frequency. 0.60 0.55 0.50 0.45 0.40 0.35 0.30 2V 2.7V 0. (mA) ds Figure 12. Fmin vs. I and GHz Notes: 1. Measurements at 2 GHz were made on a ...

Page 5

... ATF-55143 Typical Performance Curves, continued 2. (mA) dq [1,2] Figure 15. P1dB vs. I and GHz 2. (mA) ds [1] Figure 18. OIP3 vs. I and V at 900 MHz Notes: 1. Measurements at 2 GHz were made on a fixed tuned production test board that was tuned for optimal OIP3 match with reasonable noise figure at 2 ...

Page 6

... ATF-55143 Typical Performance Curves, continued 28 25°C -40°C 85° FREQUENCY (GHz) Figure 21. Gain vs. Temperature and [1] Frequency with bias at 2.7V 25°C 0 -40°C -2 85° FREQUENCY (GHz) Figure 24. IIP3 vs. Temperature and [1] Frequency with bias at 2.7V, 10 mA. Notes: 1. Measurements at 2 GHz were made on a ...

Page 7

... ATF-55143 Typical Scattering Parameters, V Freq GHz Mag. Ang. dB 0.1 0.998 -6.5 20.78 0.5 0.963 -31.7 20.37 0.9 0.894 -54.7 19.57 1.0 0.879 -60.1 19.32 1.5 0.793 -84.1 18.07 1.9 0.731 -100.8 17.11 2.0 0.718 -104.7 16.86 2.5 0.657 -123.7 15.79 3.0 ...

Page 8

... ATF-55143 Typical Scattering Parameters, V Freq GHz Mag. Ang. dB 0.1 0.997 -7.1 22.33 0.5 0.953 -34.5 21.82 0.9 0.873 -58.8 20.86 1.0 0.856 -64.6 20.58 1.5 0.759 -89.3 19.14 1.9 0.695 -106.2 18.06 2.0 0.681 -110.2 17.8 2.5 0.621 -129.3 16.62 3.0 ...

Page 9

... ATF-55143 Typical Scattering Parameters, V Freq GHz Mag. Ang. dB 0.1 0.997 -7.5 23.23 0.5 0.947 -36.2 22.66 0.9 0.858 -61.3 21.59 1.0 0.839 -67.2 21.29 1.5 0.738 -92.4 19.74 1.9 0.673 -109.4 18.59 2.0 0.659 -113.5 18.32 2.5 0.599 -132.6 17.07 3.0 ...

Page 10

... ATF-55143 Typical Scattering Parameters, V Freq GHz Mag. Ang. dB 0.1 0.998 -6.4 20.86 0.5 0.963 -31.2 20.46 0.9 0.896 -53.8 19.68 1.0 0.881 -59.2 19.44 1.5 0.794 -83 18.21 1.9 0.732 -99.5 17.25 2.0 0.718 -103.4 17.01 2.5 0.655 -122.3 15.94 3.0 0.608 -140 ...

Page 11

... ATF-55143 Typical Scattering Parameters, V Freq GHz Mag. Ang. dB 0.1 0.997 -7.4 23.29 0.5 0.947 -35.8 22.72 0.9 0.860 -60.8 21.67 1.0 0.840 -66.6 21.37 1.5 0.739 -91.7 19.83 1.9 0.672 -108.6 18.68 2.0 0.658 -112.7 18.41 2.5 0.597 -131.7 17.16 3.0 ...

Page 12

... ATF-55143 Typical Scattering Parameters, V Freq GHz Mag. Ang. dB 0.1 0.998 -7.4 23.34 0.5 0.947 -35.9 22.77 0.9 0.859 -60.9 21.71 1.0 0.839 -66.7 21.41 1.5 0.738 -91.8 19.86 1.9 0.671 -108.7 18.71 2.0 0.657 -112.7 18.44 2.5 0.595 -131.7 17.19 3.0 ...

Page 13

... ATF-55143 Typical Scattering Parameters, V Freq GHz Mag. Ang. dB 0.1 0.996 -7.9 24.3 0.5 0.937 -38.1 23.64 0.9 0.840 -64.1 22.44 1.0 0.819 -70.1 22.11 1.5 0.712 -95.7 20.43 1.9 0.646 -112.8 19.2 2.0 0.631 -116.8 18.91 2.5 0.571 -135.8 17.59 3.0 ...

Page 14

... Vdd Figure 1. Typical ATF-55143 LNA with Passive Biasing. Capacitors C2 and C5 provide a low impedance in-band RF bypass for the matching net- works. Resistors R3 and R4 provide a very important low frequency termination for the device. The resistive termination improves low frequency stability. Capacitors C3 and C6 provide the low frequency RF bypass for resistors R3 and R4 ...

Page 15

... Vdd Figure 2. Typical ATF-55143 LNA with Active Biasing. An active bias scheme is shown in Figure 2. R1 and R2 provide a constant voltage source at the base of a PNP transistor at Q2. The constant voltage at the base raised by 0.7 volts at the emitter. The constant emitter voltage plus the regulated V ...

Page 16

... Tau= Rgd=0.5 Ohm Tnom=16.85 Rd=2.025 Ohm Idstc= Rg=1.7 Ohm Ucrit=-0.72 Vgexp=1.91 Rs=0.675 Ohm Gamds=1e-4 Ld= Vtotc= Lg=0.094 nH Betatce= Ls= Rgs=0.5 Ohm Cds=0.100 pF Rc=390 Ohm ATF-55143 ADS Package Model INSIDE Package VAR Var VAR1 Egn K=5 Z2=85 Z1= GATE C=0.143 pF L Port TLINP TLINP L1 ...

Page 17

... V2 D=20.0 mil H=25.0 mil T=0.15 mil Rho=1.0 W=40.0 mil Figure 3. Adding Vias to the ATF-55143 Non-Linear Model for Comparison to Measured S and Noise Parameters. 17 eters and the simulated non- linear model, be sure to include the effect of the printed circuit board to get an accurate compari- son. This is shown schematically in Figure 3 ...

Page 18

Noise Parameter Applications Information F values at 2 GHz and higher min are based on measurements while the F below 2 GHz have mins been extrapolated. The F min values are based on a set of 16 noise figure measurements ...

Page 19

... Ordering Information Part Number No. of Devices ATF-55143-TR1 ATF-55143-TR2 ATF-55143-BLK ATF-55143-TR1G ATF-55143-TR2G ATF-55143-BLKG Package Dimensions Outline 43 (SOT-343/SC70 lead) Symbol Min (mm) E 1.15 D 1.85 HE 1.80 A 0.80 A2 0.80 A1 0.00 b 0.25 b1 0.55 c 0.10 L 0.10 Note: 1. All dimensions are in mm. 2. Dimensions are inclusive of plating. 3. Dimensions are exclusive of mold flash and metal burr. ...

Page 20

Recommended PCB Pad Layout for Agilent's SC70 4L/SOT-343 Products (dimensions in inches/mm) Device Orientation REEL CARRIER TAPE USER FEED DIRECTION COVER TAPE 20 TOP VIEW END VIEW ...

Page 21

Tape Dimensions For Outline 4T Tape Dimensions and Product Orientation Description Cavity Length Width Depth Pitch Bottom Hole Diameter Perforlation Diameter Pitch Position Carrier Tape Width Thickness Cover Tape Width Thickness Distance Cavity to Perforation (Width Direction) Cavity to Perforation ...

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