BF991,215 NXP Semiconductors, BF991,215 Datasheet - Page 5

• Manufacturer Part Number: BF991,215
• Description: MOSFET NCH DUAL GATE 20V SOT143B
• Manufacturer: NXP Semiconductors

Specifications of BF991,215

• Package / Case: SOT-143, SOT-143B, TO-253AA
• Transistor Type: N-Channel Dual Gate
• Frequency: 100MHz
• Gain: 29dB
• Voltage - Rated: 20V
• Current Rating: 20mA
• Noise Figure: 0.7dB
• Current - Test: 10mA
• Voltage - Test: 10V
• Configuration: Single Dual Gate
• Continuous Drain Current: 0.02 A
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: 6 V
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Power Dissipation: 200 mW
• Transistor Polarity: N-Channel
• Application: VHF
• Channel Type: N
• Channel Mode: Depletion
• Drain Source Voltage (max): 20V
• Power Gain (typ)@vds: 29@10VdB
• Noise Figure (max): 2dB
• Package Type: SOT
• Pin Count: 3 +Tab
• Input Capacitance (typ)@vds: 2.1@10V@Gate 1/1@10V@Gate 2pF
• Output Capacitance (typ)@vds: 1.1@10VpF
• Reverse Capacitance (typ): 0.02@10VpF
• Operating Temp Range: -65C to 150C
• Mounting: Surface Mount
• Number Of Elements: 1
• Power Dissipation (max): 200mW
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Output: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-1970-2; 933642000215; BF991 T/R

NXP Semiconductors
PACKAGE OUTLINE
handbook, full pagewidth
N-channel dual-gate MOS-FET
Dimensions in mm.
See also Soldering recommendations.
max
10
o
0.75
0.60
max
1.1
max
30
0.150
0.090
o
max
0.1
max
10
o
Rev. 03 - 20 November 2007
0.88
Fig.3 SOT143.
0
0.1
4
TOP VIEW
1
3.0
2.8
1.9
1.7
3
2
0.48
0
0.1
0.1
A
B
1.4
1.2
M
max
A B
2.5
0.2
MBC845
M
A B
Product specification
BF991
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