BF991,215 NXP Semiconductors, BF991,215 Datasheet - Page 3
![MOSFET NCH DUAL GATE 20V SOT143B](/photos/5/30/53004/568-sot-143b_sml.jpg)
BF991,215
Manufacturer Part Number
BF991,215
Description
MOSFET NCH DUAL GATE 20V SOT143B
Manufacturer
NXP Semiconductors
Datasheet
1.BF991215.pdf
(7 pages)
Specifications of BF991,215
Package / Case
SOT-143, SOT-143B, TO-253AA
Transistor Type
N-Channel Dual Gate
Frequency
100MHz
Gain
29dB
Voltage - Rated
20V
Current Rating
20mA
Noise Figure
0.7dB
Current - Test
10mA
Voltage - Test
10V
Configuration
Single Dual Gate
Continuous Drain Current
0.02 A
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
6 V
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Power Dissipation
200 mW
Transistor Polarity
N-Channel
Application
VHF
Channel Type
N
Channel Mode
Depletion
Drain Source Voltage (max)
20V
Power Gain (typ)@vds
29@10VdB
Noise Figure (max)
2dB
Package Type
SOT
Pin Count
3 +Tab
Input Capacitance (typ)@vds
2.1@10V@Gate 1/1@10V@Gate 2pF
Output Capacitance (typ)@vds
1.1@10VpF
Reverse Capacitance (typ)
0.02@10VpF
Operating Temp Range
-65C to 150C
Mounting
Surface Mount
Number Of Elements
1
Power Dissipation (max)
200mW
Screening Level
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Power - Output
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
568-1970-2
933642000215
BF991 T/R
933642000215
BF991 T/R
NXP Semiconductors
LIMITING VALUES
In according with the Absolute Maximum Rating System (IEC 134).
THERMAL CHARACTERISTICS
Note to the Limiting values and the Thermal characteristics
1. Device mounted on a ceramic substrate of 8
handbook, halfpage
V
I
I
I
I
P
T
T
R
SYMBOL
SYMBOL
D
D(AV)
G1-S
G2-S
stg
j
DS
tot
th j-a
N-channel dual-gate MOS-FET
(mW)
P tot
200
100
0
0
drain-source voltage
drain current (DC)
average drain current
gate 1-source current
gate 2-source current
total power dissipation
storage temperature
junction temperature
thermal resistance from junction to ambient
Fig.2 Power derating curve.
PARAMETER
PARAMETER
100
T amb ( C)
MGE792
200
Rev. 03 - 20 November 2007
10
up to T
0.7 mm.
in free air; note 1
amb
CONDITIONS
= 60 C; note 1
CONDITIONS
65
MIN.
VALUE
460
Product specification
20
20
20
200
+150
150
10
10
MAX.
BF991
UNIT
K/W
V
mA
mA
mA
mA
mW
3 of 7
C
C
UNIT