BF991 NXP Semiconductors, BF991 Datasheet

Depletion type Field-Effect Transistor in a plastic SOT143 microminiature package

BF991

Manufacturer Part Number
BF991
Description
Depletion type Field-Effect Transistor in a plastic SOT143 microminiature package
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BF991

Application
VHF
Channel Type
N
Channel Mode
Depletion
Continuous Drain Current
0.02A
Drain Source Voltage (max)
20V
Power Gain (typ)@vds
29@10VdB
Noise Figure (max)
2dB
Package Type
SOT
Pin Count
3 +Tab
Input Capacitance (typ)@vds
2.1@10V@Gate 1/1@10V@Gate 2pF
Output Capacitance (typ)@vds
1.1@10VpF
Reverse Capacitance (typ)
0.02@10VpF
Operating Temp Range
-65C to 150C
Mounting
Surface Mount
Number Of Elements
1
Power Dissipation (max)
200mW
Screening Level
Military
Lead Free Status / Rohs Status
Compliant

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Price
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Dear customer,
As from October 1st, 2006 Philips Semiconductors has a new trade name
- NXP Semiconductors, which will be used in future data sheets together with new contact
details.
In data sheets where the previous Philips references remain, please use the new links as
shown below.
http://www.philips.semiconductors.com use http://www.nxp.com
http://www.semiconductors.philips.com use http://www.nxp.com (Internet)
sales.addresses@www.semiconductors.philips.com use salesaddresses@nxp.com
(email)
The copyright notice at the bottom of each page (or elsewhere in the document,
depending on the version)
- © Koninklijke Philips Electronics N.V. (year). All rights reserved -
is replaced with:
- © NXP B.V. (year). All rights reserved. -
If you have any questions related to the data sheet, please contact our nearest sales
office via e-mail or phone (details via salesaddresses@nxp.com). Thank you for your
cooperation and understanding,
NXP Semiconductors
BF991
N-channel dual-gate MOS-FET
Rev. 03 — 20 November 2007
IMPORTANT NOTICE
Product data sheet

Related parts for BF991

BF991 Summary of contents

Page 1

... BF991 N-channel dual-gate MOS-FET Rev. 03 — 20 November 2007 IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact details. In data sheets where the previous Philips references remain, please use the new links as shown below ...

Page 2

... DESCRIPTION Marking code: %MA. CONDITIONS amb kHz mA mA MHz mA 200 MHz mS mA Rev November 2007 Product specification Top view MAM039 Fig.1 Simplified outline (SOT143) and symbol. TYP G2 2 Sopt = 4 V G2-S BF991 s,b MAX. UNIT 200 mW 150 ...

Page 3

... Device mounted on a ceramic substrate of 8 200 handbook, halfpage P tot (mW) 100 0 0 100 Fig.2 Power derating curve. CONDITIONS note 1 amb CONDITIONS in free air; note 1 10 0.7 mm. MGE792 200 T amb ( C) Rev November 2007 Product specification BF991 MIN. MAX. UNIT 200 mW 65 +150 C 150 C VALUE UNIT ...

Page 4

... mA G2-S CONDITIONS kHz MHz MHz MHz MHz f = 100 MHz mS 200 MHz mS 100 MHz mS 0.5 mS Lopt f = 200 MHz mS 0.5 mS Lopt Rev November 2007 Product specification BF991 MIN. MAX G2 2.5 G2 2.5 G1 amb MIN. TYP. MAX 2 1 0.7 1.7 Sopt = Sopt = Sopt = Sopt ...

Page 5

... Dimensions in mm. See also Soldering recommendations. 3.0 2.8 0.150 1.9 0.090 4 3 0.1 max o 10 max 0.88 0.48 0.1 1.7 TOP VIEW Fig.3 SOT143. Rev November 2007 Product specification 0.2 A 2.5 1.4 max 1.2 0 MBC845 0 0.1 BF991 ...

Page 6

... Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. http://www.nxp.com salesaddresses@nxp.com Rev November 2007 BF991 N-channel dual-gate MOS-FET ...

Page 7

... NXP B.V. 2007. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com BF991 N-channel dual-gate MOS-FET Supersedes BF991_2 BF991_SF_1 - All rights reserved. Date of release: 20 November 2007 Document identifier: BF991_N_3 ...

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