BF908WR,115 NXP Semiconductors, BF908WR,115 Datasheet - Page 4

• Manufacturer Part Number: BF908WR,115
• Description: MOSFET NCH DUAL GATE 12V CMPAK-4
• Manufacturer: NXP Semiconductors

Specifications of BF908WR,115

• Package / Case: CMPAK-4
• Transistor Type: N-Channel Dual Gate
• Frequency: 200MHz
• Voltage - Rated: 12V
• Current Rating: 40mA
• Noise Figure: 0.6dB
• Current - Test: 15mA
• Voltage - Test: 8V
• Configuration: Single Dual Gate
• Continuous Drain Current: 0.04 A
• Drain-source Breakdown Voltage: 12 V
• Gate-source Breakdown Voltage: 8 V
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Power Dissipation: 300 mW
• Transistor Polarity: N-Channel
• Application: VHF/UHF
• Channel Type: N
• Channel Mode: Depletion
• Drain Source Voltage (max): 12V
• Noise Figure (max): 2.5dB
• Frequency (max): 1GHz
• Package Type: CMPAK
• Pin Count: 3 +Tab
• Input Capacitance (typ)@vds: 3.1@8V@Gate 1/1.8@8V@Gate 2pF
• Output Capacitance (typ)@vds: 1.7@8VpF
• Reverse Capacitance (typ): 0.03@8VpF
• Operating Temp Range: -65C to 150C
• Mounting: Surface Mount
• Number Of Elements: 1
• Power Dissipation (max): 300mW
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Output: -
• Gain: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-1969-2; 934031470115; BF908WR T/R

NXP Semiconductors
THERMAL CHARACTERISTICS
Notes
1. Device mounted on a printed-circuit board.
2. T
STATIC CHARACTERISTICS
T
DYNAMIC CHARACTERISTICS
Common source; T
1995 Apr 25
R
R
V
V
V
V
I
I
I
y
C
C
C
C
F
j
DSS
G1-SS
G2-SS
SYMBOL
SYMBOL
SYMBOL
= 25 C; unless otherwise specified.
(BR)G1-SS
(BR)G2-SS
(P)G1-S
(P)G2-S
N-channel dual-gate MOS-FET
th j-a
th j-s
ig1-s
ig2-s
os
rs
fs

s
is the temperature at the soldering point of the source lead.
thermal resistance from junction to ambient
thermal resistance from junction to soldering point
gate 1-source breakdown voltage V
gate 2-source breakdown voltage V
gate 1-source cut-off voltage
gate 2-source cut-off voltage
drain-source current
gate 1 cut-off current
gate 2 cut-off current
forward transfer admittance
input capacitance at gate 1
input capacitance at gate 2
drain-source capacitance
reverse transfer capacitance f = 1 MHz
noise figure
amb
PARAMETER
= 25 C; V
PARAMETER
PARAMETER
DS
= 8 V; V
G2-S
pulsed; T
f = 1 MHz
f = 1 MHz
f = 1 MHz
f = 200 MHz; G
f = 800 MHz; G
= 4 V; I
V
V
V
V
V
G2-S
G1-S
G2-S
G1-S
G2-S
G2-S
G1-S
j
= 25 C
= V
= V
= 4 V; V
= 4 V; V
= 4 V; V
= V
= V
D
CONDITIONS
= 15 mA; unless otherwise specified.
4
DS
DS
DS
DS
CONDITIONS
S
S
= 2 mS; B
= G
= 0; I
= 0; I
= 0; V
= 0; V
DS
DS
DS
Sopt
= 8 V; I
= 8 V; I
= 8 V; V
G1-S
G2-S
note 1
T
G1-S
G2-S
; B
s
= 87 C; note 2
S
S
= 10 mA
= 10 mA
CONDITIONS
= 5 V
= 5 V
= B
= B
D
D
G1-S
= 20 A 
= 20 A 
Sopt
Sopt
= 0
8
8
3


36
2.4
1.2
1.2


20
MIN.
MIN.




15


Preliminary specification
43
3.1
1.8
1.7
30
0.6
1.5
TYP.
TYP.
VALUE
350
210
BF908WR
20
20
2
1.5
27
50
50
50
4
2.5
2.2
45
1.2
2.5
MAX.
MAX.
UNIT
K/W
K/W
V
V
V
V
mA
nA
nA
mS
pF
pF
pF
fF
dB
dB
UNIT
UNIT