BF908WR,115 NXP Semiconductors, BF908WR,115 Datasheet - Page 2

• Manufacturer Part Number: BF908WR,115
• Description: MOSFET NCH DUAL GATE 12V CMPAK-4
• Manufacturer: NXP Semiconductors

Specifications of BF908WR,115

• Package / Case: CMPAK-4
• Transistor Type: N-Channel Dual Gate
• Frequency: 200MHz
• Voltage - Rated: 12V
• Current Rating: 40mA
• Noise Figure: 0.6dB
• Current - Test: 15mA
• Voltage - Test: 8V
• Configuration: Single Dual Gate
• Continuous Drain Current: 0.04 A
• Drain-source Breakdown Voltage: 12 V
• Gate-source Breakdown Voltage: 8 V
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Power Dissipation: 300 mW
• Transistor Polarity: N-Channel
• Application: VHF/UHF
• Channel Type: N
• Channel Mode: Depletion
• Drain Source Voltage (max): 12V
• Noise Figure (max): 2.5dB
• Frequency (max): 1GHz
• Package Type: CMPAK
• Pin Count: 3 +Tab
• Input Capacitance (typ)@vds: 3.1@8V@Gate 1/1.8@8V@Gate 2pF
• Output Capacitance (typ)@vds: 1.7@8VpF
• Reverse Capacitance (typ): 0.03@8VpF
• Operating Temp Range: -65C to 150C
• Mounting: Surface Mount
• Number Of Elements: 1
• Power Dissipation (max): 300mW
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Output: -
• Gain: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-1969-2; 934031470115; BF908WR T/R

NXP Semiconductors
FEATURES
 High forward transfer admittance
 Short channel transistor with high forward transfer
 Low noise gain controlled amplifier up to 1 GHz.
APPLICATIONS
 VHF and UHF applications with 12 V supply voltage,
DESCRIPTION
Depletion type field effect transistor in a plastic
microminiature SOT343R package. The transistor is
protected against excessive input voltage surges by
integrated back-to-back diodes between gates and
source.
QUICK REFERENCE DATA
1995 Apr 25
V
I
P
T
y
C
C
F
The device is supplied in an antistatic package. The
gate-source input must be protected against static
discharge during transport or handling.
D
admittance to input capacitance ratio
such as television tuners and professional
communications equipment.
j
DS
tot
N-channel dual-gate MOS-FET
ig1-s
rs
SYMBOL
fs

drain-source voltage
drain current
total power dissipation
operating junction temperature
forward transfer admittance
input capacitance at gate 1
reverse transfer capacitance
noise figure
CAUTION
PARAMETER
f = 1 MHz
f = 800 MHz
2
PINNING
CONDITIONS
Marking code: MD.
PIN
Fig.1 Simplified outline (SOT343R) and symbol.
1
2
3
4
Top view
3
2
SYMBOL
1
s, b
g
g
d
4
2
1




36
2.4
20

MIN.
source
drain
gate 2
gate 1
MAM198
43
30




3.1
1.5
TYP.
Preliminary specification
DESCRIPTION
g 2
g 1
12
40
300
150
50
4
45
2.5
BF908WR
MAX.
s,b
d
V
mA
mW
C
mS
pF
fF
dB
UNIT