SPB11N60S5 Infineon Technologies, SPB11N60S5 Datasheet - Page 8

• Manufacturer Part Number: SPB11N60S5
• Description: MOSFET N-CH 600V 11A TO-263
• Manufacturer: Infineon Technologies
• Series: CoolMOS™r

Specifications of SPB11N60S5

• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 380 mOhm @ 7A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 11A
• Vgs(th) (max) @ Id: 5.5V @ 500µA
• Gate Charge (qg) @ Vgs: 54nC @ 10V
• Input Capacitance (ciss) @ Vds: 1460pF @ 25V
• Power - Max: 125W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.38 Ohm @ 10 V
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 11 A
• Power Dissipation: 125000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SP000012373; SPB11N60S5; SPB11N60S5INTR; SPB11N60S5XT

13 Drain-source breakdown voltage
V
15 Typ. capacitances
C = f ( V
parameter: V
Rev. 2.3
(BR)DSS
pF
10
10
10
10
10
720
680
660
640
620
600
580
560
540
V
-60
4
3
2
1
0
0
SPP11N60S5
DS
= f ( T
)
C
100
-20
rss
GS
j
)
=0V, f=1 MHz
200
20
C
C
300
60
iss
oss
100
400
°C
V
T
V
j
DS
180
600
Page 8
14 Avalanche power losses
P
parameter: E
16 Typ. C
E
AR
oss
µJ
W
300
200
150
100
= f ( V
= f ( f )
7.5
5.5
4.5
3.5
2.5
1.5
0.5
50
0
6
5
4
3
2
1
0
10
0
4
DS
oss
)
100
AR
stored energy
=0.6mJ
200
300
10
5
SPB11N60S5
400
2005-07-22
Hz
V
f
V
DS
600
10
6