SPB11N60S5 Infineon Technologies, SPB11N60S5 Datasheet
SPB11N60S5
Specifications of SPB11N60S5
SPB11N60S5
SPB11N60S5INTR
SPB11N60S5XT
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SPB11N60S5 Summary of contents
Page 1
... Gate source voltage AC (f >1Hz) Power dissipation 25°C C Operating and storage temperature Rev. 2.3 Ordering Code Q67040-S4199 Symbol puls jmax limited jmax limited jmax tot stg Page 1 SPB11N60S5 600 0.38 DS(on PG-TO263 Marking 11N60S5 Value 340 0.6 11 ±20 ± 30 125 -55... +150 2005-07-22 V Ω A Unit °C ...
Page 2
... DS I =600V, V =0V, V DSS DS GS =25° =150° =20V, V =0V V GSS GS DS =10V, I =7A DS(on) GS =25° =150° =1MHz, open Drain R G Page 2 SPB11N60S5 Value Unit 20 V/ns Values Unit min. typ. max K 260 °C Values Unit min. typ. max. 600 - - V - ...
Page 3
... V V d(on =6.8 Ω I =11A d(off =350V, I =11A =350V, I =11A 10V =350V, I =11A V D (plateau) DD Page 3 SPB11N60S5 Values min. typ. max 1460 - 610 - 130 =0/10V 150 - while V is rising from 0 to 80% V oss DS while V is rising from 0 to 80% V oss ...
Page 4
... SD GS =350V /dt=100A/µ Unit Symbol Thermal capacitance K/W C th1 C th2 C th3 C th4 C th5 C th6 th1 th th1 th2 th,n Page 4 SPB11N60S5 Values min. typ 650 = 7.9 Value typ. 0.0001878 0.0007106 0.000988 0.002791 0.007285 0.063 E xternal H eatsink T case Unit max 1.2 V 1105 ns - µ ...
Page 5
... SPP11N60S5 140 W 120 110 100 Transient thermal impedance thJC p parameter K Rev. 2.3 2 Safe operating area parameter : 100 120 °C 160 Typ. output characteristic parameter 0.01 single pulse - Page 5 SPB11N60S5 ) DS =25° 0.001 0. 0 =25° µ 20V 12V 10V 2005-07- ...
Page 6
... Rev. 2.3 6 Typ. drain-source on resistance R DS(on) parameter mΩ Typ. transfer characteristics parameter: t °C 100 180 T j Page 6 SPB11N60S5 = =150° 0 ≥ DS(on)max = 10 µ °C 150 ° 20V 12V 10V ...
Page 7
... T j (START Rev. 2.3 10 Forward characteristics of body diode parameter Gate 12 Avalanche energy E AS par =25° (START µ Page 7 SPB11N60S5 ) µ SPP11N60S5 °C typ 150 °C typ °C (98 150 °C (98 0.4 0.8 1 350 250 200 150 100 100 2.4 ...
Page 8
... Rev. 2.3 14 Avalanche power losses parameter: E 300 W 200 150 100 50 0 100 °C 180 Typ oss 7.5 µJ 6 5.5 5 4.5 4 3.5 3 2.5 2 1.5 1 0.5 0 400 V 600 Page 8 SPB11N60S5 =0.6mJ stored energy oss ) DS 100 200 300 400 2005-07- 600 V DS ...
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... Definition of diodes switching characteristics Rev. 2.3 Page 9 SPB11N60S5 2005-07-22 ...
Page 10
... PG-TO263-3-2, PG-TO263-3-5, PG-TO263-3-22 Rev. 2.3 Page 10 SPB11N60S5 2005-07-22 ...
Page 11
... Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.3 Page 11 SPB11N60S5 2005-07-22 ...