SPB11N60S5 Infineon Technologies, SPB11N60S5 Datasheet - Page 6

• Manufacturer Part Number: SPB11N60S5
• Description: MOSFET N-CH 600V 11A TO-263
• Manufacturer: Infineon Technologies
• Series: CoolMOS™r

Specifications of SPB11N60S5

• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 380 mOhm @ 7A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 11A
• Vgs(th) (max) @ Id: 5.5V @ 500µA
• Gate Charge (qg) @ Vgs: 54nC @ 10V
• Input Capacitance (ciss) @ Vds: 1460pF @ 25V
• Power - Max: 125W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.38 Ohm @ 10 V
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 11 A
• Power Dissipation: 125000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SP000012373; SPB11N60S5; SPB11N60S5INTR; SPB11N60S5XT

5 Typ. output characteristic
I
parameter: t
7 Drain-source on-state resistance
R
parameter : I
Rev. 2.3
D
DS(on)
= f ( V
Ω
A
2.1
1.8
1.6
1.4
1.2
0.8
0.6
0.4
0.2
18
14
12
10
8
6
4
2
0
1
0
-60
0
SPP11N60S5
DS
= f (T
); T
-20
p
D
j
= 10 µs, V
5
)
j
= 7 A, V
=150°C
20
98%
10
typ
GS
60
GS
20V
12V
10V
= 10 V
15
100
V
°C
T
V
9V
8V
7V
6V
j
DS
180
25
Page 6
6 Typ. drain-source on resistance
R
parameter: T
8 Typ. transfer characteristics
I
parameter: t
D
DS(on)
= f ( V
mΩ
0.5
A
32
24
20
16
12
2
1
0
8
4
0
0
0
= f (I
GS
2
D
); V
)
p
j
25 °C
150 °C
=150°C, V
4
= 10 µs
4
DS
≥ 2 x I
6
8
8
D
GS
10
x R
12
SPB11N60S5
DS(on)max
12
2005-07-22
14
V
20V
12V
10V
9V
8V
7V
6V
A
I
V
D
GS
18
20