SPU02N60S5 Infineon Technologies, SPU02N60S5 Datasheet - Page 6

• Manufacturer Part Number: SPU02N60S5
• Description: MOSFET N-CH 600V 1.8A TO-251
• Manufacturer: Infineon Technologies
• Series: CoolMOS™r

Specifications of SPU02N60S5

• Package / Case: IPak, TO-251, DPak (3 straight short leads + tab)
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 3 Ohm @ 1.1A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 1.8A
• Vgs(th) (max) @ Id: 5.5V @ 80µA
• Gate Charge (qg) @ Vgs: 9.5nC @ 10V
• Input Capacitance (ciss) @ Vds: 240pF @ 25V
• Power - Max: 25W
• Mounting Type: Through Hole
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 3 Ohm @ 10 V
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 1.8 A
• Power Dissipation: 25000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Fall Time: 20 ns
• Rise Time: 35 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SP000012422; SPU02N60S5; SPU02N60S5IN; SPU02N60S5X; SPU02N60S5XK

5 Typ. transfer characteristics
I
parameter: t
7 Forward characteristics of body diode
I
parameter: T j , t
Rev. 2.5
D
F
= f ( V
= f (V
10
10
10
10
A
A
-1
-2
6
4
3
2
1
0
1
0
0
0
SPU02N60S5
SD
GS
)
0.4
); V
p
4
= 10 µs
DS
0.8
p
≥ 2 x I
= 10 µs
1.2
8
T
T
T
T
j
j
j
j
= 25 °C typ
= 150 °C typ
= 25 °C (98%)
= 150 °C (98%)
D
1.6
x R
12
DS(on)max
2
V
2.4
GS
V
V
V
SD
20
3
Page 6
6 Typ. gate charge
V
parameter: I
8 Avalanche SOA
I
par.: T
AR
GS
= f (t
A
1.6
1.4
1.2
0.8
0.6
0.4
0.2
= f (Q
V
16
12
10
8
6
4
2
0
2
1
0
10
j
0
≤ 150 °C
SPU02N60S5
0.2 V
0.8 V
T
AR
-3
j(START)
1
)
Gate
10
DS max
DS max
D
-2
2
= 1.8 A pulsed
)
=125°C
10
3
-1
4
10
0
5
T
10
j(START)
SPU02N60S5
SPD02N60S5
6
1
10
7
2008-04-07
2
=25°C
8
nC
Q
t
µs
AR
Gate
10
10
4