SPU02N60S5 Infineon Technologies, SPU02N60S5 Datasheet - Page 10

• Manufacturer Part Number: SPU02N60S5
• Description: MOSFET N-CH 600V 1.8A TO-251
• Manufacturer: Infineon Technologies
• Series: CoolMOS™r

Specifications of SPU02N60S5

• Package / Case: IPak, TO-251, DPak (3 straight short leads + tab)
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 3 Ohm @ 1.1A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 1.8A
• Vgs(th) (max) @ Id: 5.5V @ 80µA
• Gate Charge (qg) @ Vgs: 9.5nC @ 10V
• Input Capacitance (ciss) @ Vds: 240pF @ 25V
• Power - Max: 25W
• Mounting Type: Through Hole
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 3 Ohm @ 10 V
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 1.8 A
• Power Dissipation: 25000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Fall Time: 20 ns
• Rise Time: 35 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SP000012422; SPU02N60S5; SPU02N60S5IN; SPU02N60S5X; SPU02N60S5XK

SPU02N60S5
SPD02N60S5
PG-TO251-3-1, PG-TO251-3-21 (I-PAK)
2008-04-07
Rev. 2.5
Page 10