SPU02N60S5 Infineon Technologies, SPU02N60S5 Datasheet - Page 3

• Manufacturer Part Number: SPU02N60S5
• Description: MOSFET N-CH 600V 1.8A TO-251
• Manufacturer: Infineon Technologies
• Series: CoolMOS™r

Specifications of SPU02N60S5

• Package / Case: IPak, TO-251, DPak (3 straight short leads + tab)
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 3 Ohm @ 1.1A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 1.8A
• Vgs(th) (max) @ Id: 5.5V @ 80µA
• Gate Charge (qg) @ Vgs: 9.5nC @ 10V
• Input Capacitance (ciss) @ Vds: 240pF @ 25V
• Power - Max: 25W
• Mounting Type: Through Hole
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 3 Ohm @ 10 V
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 1.8 A
• Power Dissipation: 25000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Fall Time: 20 ns
• Rise Time: 35 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SP000012422; SPU02N60S5; SPU02N60S5IN; SPU02N60S5X; SPU02N60S5XK

Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
1 Repetitve avalanche causes additional power losses that can be calculated as P
2 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
Rev. 2.5
Electrical Characteristics , at T
Parameter
Characteristics
Transconductance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Q
Q
Q
V
g
C
C
C
t
t
t
t
Symbol
d(on)
r
d(off)
f
j
(plateau)
fs
gs
gd
g
iss
oss
rss
= 25 °C, unless otherwise specified
V
V
V
V
V
I
V
f=1MHz
V
I
Page 3
D
D
DD
DD
GS
DD
DS
GS
DD
=1.1A
=1.8A, R
=350V, I
=350V, I
=0 to 10V
=350V, I
≥ 2* I
=0V, V
=350V, V
Conditions
D
* R
G
DS
DS(on)max
=50 Ω
D
D
D
GS
=25V,
=1.8A
=1.8A,
=1.8A
=0/10V,
,
min.
-
-
-
-
-
-
-
-
-
-
-
-
AV
=E
AR
Values
typ.
240
2.3
4.5
7.3
*f.
1.4
4.4
77
35
35
35
20
8
SPU02N60S5
SPD02N60S5
2008-04-07
max.
9.5
42
30
-
-
-
-
-
-
-
-
-
nC
V
Unit
S
pF
ns