SPB80N06S-08 Infineon Technologies, SPB80N06S-08 Datasheet - Page 7

• Manufacturer Part Number: SPB80N06S-08
• Description: MOSFET N-CH 55V 80A D2PAK
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of SPB80N06S-08

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 7.7 mOhm @ 80A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 80A
• Vgs(th) (max) @ Id: 4V @ 240µA
• Gate Charge (qg) @ Vgs: 187nC @ 10V
• Input Capacitance (ciss) @ Vds: 3660pF @ 25V
• Power - Max: 300W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 8 m Ohms
• Forward Transconductance Gfs (max / Min): 73 S
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 80 A
• Power Dissipation: 300 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: SP000054056; SPB80N06S08T

Rev. 1.0
13 Typ. Avalanche characteristics
I
parameter: T
15 Typ. gate charge
V
parameter: V
AS
GS
=f(t
=f(Q
100
10
12
10
AV
1
8
6
4
2
0
); R
1
gate
0
); I
GS
j(start)
DD
20
D
=25
=80 A pulsed
40
10
Q
C °150
60
t
gate
AV
[µs]
[nC]
80
100
C °100
100
V 11
120
V 44
C °25
1000
140
page 7
14 Typ. Avalanche Energy
E
parameter: I
16 Drain-source breakdown voltage
V
AS
BR(DSS)
=f(T
800
700
600
500
400
300
200
100
64
62
60
58
56
54
52
50
0
=f(T
-60
0
j
); V
80 A
DD
D
j
); I
-20
= 25 V; R
D
=250 µA
SPI80N06S-08, SPP80N06S-08
50
20
GS
T
T
=25
100
j
j
[°C]
60
[°C]
100
SPB80N06S-08
150
140
2005-06-28
200
180