SPB80N06S-08 Infineon Technologies, SPB80N06S-08 Datasheet - Page 6

• Manufacturer Part Number: SPB80N06S-08
• Description: MOSFET N-CH 55V 80A D2PAK
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of SPB80N06S-08

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 7.7 mOhm @ 80A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 80A
• Vgs(th) (max) @ Id: 4V @ 240µA
• Gate Charge (qg) @ Vgs: 187nC @ 10V
• Input Capacitance (ciss) @ Vds: 3660pF @ 25V
• Power - Max: 300W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 8 m Ohms
• Forward Transconductance Gfs (max / Min): 73 S
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 80 A
• Power Dissipation: 300 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: SP000054056; SPB80N06S08T

Rev. 1.0
9 Typical Drain-source on-state resistance
R
11 Typ. capacitances
C =f(V
DS(on)
10
10
10
16
14
12
10
DS
=f(T
8
6
4
2
0
4
3
2
-60
); V
0
j
); I
GS
D
=0 V; f =1 MHz
-20
=80 A; V
10
20
GS
V
T
=10 V
DS
j
60
20
Coss
[°C]
Ciss
Crss
[V]
100
30
140
180
40
page 6
10 Typ. gate threshold voltage
V
parameter: I
12 Forward characteristics of reverse diode
I
parameter: T
F
GS(th)
=f(V
3.5
2.5
1.5
0.5
=f(T
SD
4
3
2
1
-60
)
0
j
); V
D
j
0.2
-20
GS
=V
SPI80N06S-08, SPP80N06S-08
175 °C
0.4
DS
20
µA 240
0.6
V
T
SD
j
60
[°C]
[V]
0.8
µA 1200
25 °C
SPB80N06S-08
100
1
140
2005-06-28
1.2
180
1.4