SPB80N06S-08 Infineon Technologies, SPB80N06S-08 Datasheet - Page 5

• Manufacturer Part Number: SPB80N06S-08
• Description: MOSFET N-CH 55V 80A D2PAK
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of SPB80N06S-08

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 7.7 mOhm @ 80A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 80A
• Vgs(th) (max) @ Id: 4V @ 240µA
• Gate Charge (qg) @ Vgs: 187nC @ 10V
• Input Capacitance (ciss) @ Vds: 3660pF @ 25V
• Power - Max: 300W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 8 m Ohms
• Forward Transconductance Gfs (max / Min): 73 S
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 80 A
• Power Dissipation: 300 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: SP000054056; SPB80N06S08T

Rev. 1.0
5 Typ. output characteristics
I
parameter: V
7 Typ. transfer characteristics
I
parameter: T
D
D
=f(V
=f(V
160
140
120
100
160
140
120
100
80
60
40
20
80
60
40
20
DS
GS
0
0
); T
0
); |V
0
j
=25 °C
DS
j
GS
|>2|I
V 10
2
D
|R
1
DS(on)max
V 7
V 8
175 °C
V
V
DS
GS
4
6.5 V
[V]
[V]
25 °C
2
6
5.5 V
4.5 V
5 V
6 V
8
3
page 5
6 Typ. drain-source on resistance
R
parameter: V
8 Typ. forward transconductance
g
fs
DS(on)
=f(I
25
20
15
10
80
70
60
50
40
30
20
10
D
=f(I
5
0
0
); T
0
0
D
j
); T
=25 °C
GS
20
j
=25 °C
V 4.5
SPI80N06S-08, SPP80N06S-08
20
40
V 5
I
I
D
D
60
40
[A]
[A]
SPB80N06S-08
80
60
V 5.5
100
2005-06-28
V 10
V 8
V 6.5
V 7
V 6
120
80