SPB21N10 G Infineon Technologies, SPB21N10 G Datasheet - Page 7

• Manufacturer Part Number: SPB21N10 G
• Description: MOSFET N-CH 100V 21A D2PAK
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of SPB21N10 G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 80 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 21A
• Vgs(th) (max) @ Id: 4V @ 44µA
• Gate Charge (qg) @ Vgs: 38.4nC @ 10V
• Input Capacitance (ciss) @ Vds: 865pF @ 25V
• Power - Max: 90W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SP000102171; SPB21N10GXT

13 Typ. avalanche energy
E
par.: I
15 Drain-source breakdown voltage
V
AS
(BR)DSS
mJ
140
120
110
100
120
114
112
110
108
106
104
102
100
= f ( T
V
90
80
70
60
50
40
30
20
10
98
96
94
92
90
D
0
-60
25
SPP21N10
Rev 2.2
= 21 A , V
j
= f ( T
)
45
-20
65
j
)
20
DD
85
= 25 V, R
60
105
125
100
GS
145
140
= 25
°C
°C
T
T
j
j

185
200
Page 7
14 Typ. gate charge
V
parameter: I
GS
= f ( Q
V
16
12
10
8
6
4
2
0
0
SPP21N10
5
Gate
D
10
= 21 A pulsed
)
15
0,2
SPP21N10,SPB21N10 G
V
20
DS max
25
30
0,8 V
35
2006-11-14
DS max
SPI21N10
40
nC
Q
Gate
50