SPB21N10 G Infineon Technologies, SPB21N10 G Datasheet - Page 3

• Manufacturer Part Number: SPB21N10 G
• Description: MOSFET N-CH 100V 21A D2PAK
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of SPB21N10 G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 80 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 21A
• Vgs(th) (max) @ Id: 4V @ 44µA
• Gate Charge (qg) @ Vgs: 38.4nC @ 10V
• Input Capacitance (ciss) @ Vds: 865pF @ 25V
• Power - Max: 90W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SP000102171; SPB21N10GXT

Rev 2.2
Electrical Characteristics, at T
Parameter
Dynamic Characteristics
Transconductance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Reverse Diode
Inverse diode continuous
forward current
Inverse diode direct current,
pulsed
Inverse diode forward voltage V
Reverse recovery time
Reverse recovery charge
Symbol
g
C
C
C
t
t
t
t
Q
Q
Q
V
I
I
t
Q
j
d(on)
r
d(off)
f
S
SM
rr
fs
= 25 °C, unless otherwise specified
iss
oss
rss
(plateau) V
SD
gs
gd
g
rr
V
I
V
f=1MHz
V
I
V
V
V
T
V
V
di
D
D
Page 3
DS
GS
DD
DD
DD
GS
DD
C
GS
R
F
=15.0A
=21A, R
=25°C
=50V, I
/dt=100A/µs


=0V, V
=50V, V
=80V, I
=80V, I
=0 to 10V
=80V, I
=0V, I
Conditions
2 *I
D
*R
F =
G
F
DS
D
D
D
=21A
=13
DS(on)max
GS
l
S
=21A
=21A,
=21A
=25V,
,
=10V,

,
min.
6.5
SPP21N10,SPB21N10 G
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Values
12.4
15.5
28.9
0.94
typ.
650
140
153
3.9
6.2
80
10
56
37
23
65
-
-
2006-11-14
max.
23.3
38.4
1.25 V
81.5 ns
865
186
120
192
5.2
15
84
55
35
21
84
SPI21N10
-
-
Unit
S
pF
ns
nC
V
A
nC