SPB21N10 G Infineon Technologies, SPB21N10 G Datasheet
SPB21N10 G
Specifications of SPB21N10 G
SPB21N10GXT
Related parts for SPB21N10 G
SPB21N10 G Summary of contents
Page 1
... T C Operating and storage temperature IEC climatic category; DIN IEC 68-1 Rev 2.2 PG-TO262-3 °C, unless otherwise specified Symbol puls E dv/dt =175°C jmax Page 1 SPP21N10,SPB21N10 G Product Summary DS(on PG-TO263-3-2 PG-TO220-3-1 Marking 21N10 21N10 21N10 Value 21 15.0 84 130 AS 6 ±20 ...
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... Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. Rev 2.2 Symbol °C, unless otherwise specified j Symbol DSS I GSS R Page 2 SPP21N10,SPB21N10 G Values min. typ thJC - - thJA thJA - - - - Values min. typ. max. 100 - (BR)DSS 2 ...
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... Q V =80V, I =21A =80V, I =21A 10V GS V (plateau) V =80V, I =21A =25° =0V, I =21A =50V /dt=100A/µ Page 3 SPI21N10 SPP21N10,SPB21N10 G Values min. typ. max. 6.5 12 650 865 - 140 186 - 80 120 - 3.9 5.2 - 15.5 23.3 - 28.9 38 0. 153 192 2006-11-14 Unit ...
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... C 2 SPP21N10 Rev 2.2 2 Drain current parameter: V SPP21N10 °C 190 Transient thermal impedance thJC parameter : 6.8µs SPP21N10 10 K/W 10 µ 100 µ Page 4 SPI21N10 SPP21N10,SPB21N10 100 120 140 160 ) 0.50 single pulse - 2006-11-14 °C 190 T C 0.20 0.10 0.05 0.02 0. ...
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... D parameter µ Rev 2.2 6 Typ. drain-source on resistance R DS(on) parameter: V 260 [V]= a= 5.6 b= 6.0 220 c= 7.0 200 d= 8.0 e= 10.0 180 c 160 140 120 100 Typ. forward transconductance DS(on)max fs D parameter Page 5 SPI21N10 SPP21N10,SPB21N10 [V]= c= 7.0 d= 8.0 a= 5.6 e= 10 =25° 2006-11- ...
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... Typ. capacitances parameter: V =0V MHz Rev 2.2 10 Typ. gate threshold voltage V GS(th parameter 140 °C 100 200 Forward character. of reverse diode parameter iss C oss C rss Page 6 SPP21N10,SPB21N10 2 =44µA D 1.5 -65 - µ SPP21N10 °C typ 175 °C typ °C (98 175 °C (98 0.4 ...
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... Drain-source breakdown voltage (BR)DSS j SPP21N10 120 V 114 112 110 108 106 104 102 100 -60 - Rev 2.2 14 Typ. gate charge parameter 125 145 °C 185 T j 100 140 °C 200 T j Page 7 SPP21N10,SPB21N10 G ) Gate = 21 A pulsed D SPP21N10 max 0 SPI21N10 DS max Gate 2006-11-14 ...
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... Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Rev 2.2 SPP21N10,SPB21N10 G Page 8 SPI21N10 2006-11-14 ...